Photoresist characterization using double exposures with interference lithography

Thomas B OReilly; Henry I. Smith

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Photoresist characterization using double exposures with interference lithography

机译：使用两次曝光和干涉光刻的光刻胶表征

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摘要

Photoresist characterization is an important part of process control for any lithography technique. This paper describes a means to experimentally determine how the linewidth in interference lithography varies with characteristics of the exposure, using far fewer exposures than are needed using methods previously described in the literature. In this method, a sample is exposed twice, with the sample rotated a few degrees between the two exposures. From micrographs of the developed resist patterns it is possible to determine how linewidth varies with both average dose and dose modulation, and what dose modulation is required to produce an acceptable pattern for that dose and spatial period. The information generated by this method is directly applicable to interference lithography, but can also be used to study the performance of photoresist for use with other lithography systems.

机译：对于任何光刻技术来说，光刻胶表征都是过程控制的重要组成部分。本文介绍了一种通过实验确定干涉光刻中的线宽如何随曝光特性变化的方法，该方法所使用的曝光量要比文献中先前所述的方法少得多。在这种方法中，样品被两次曝光，样品在两次曝光之间旋转了几度。根据显影后的抗蚀剂图案的显微照片，可以确定线宽如何随平均剂量和剂量调制而变化，以及需要哪种剂量调制才能在该剂量和空间周期内产生可接受的图案。通过这种方法生成的信息可直接应用于干涉光刻，但也可用于研究与其他光刻系统一起使用的光刻胶的性能。

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《Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures》 |2008年第1期|p.128-131|共4页
作者
Thomas B OReilly; Henry I. Smith;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程物理学;
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1. Investigation of the AZ 5214E photoresist by the laser interference, EBDW and NSOM lithographies [J] . Skriniarova J., Pudis D., Andok R., Applied Surface Science . 2017,第Feba15期

机译：通过激光干涉，EBDW和NSOM光刻研究AZ 5214E光致抗蚀剂
2. Pattern Distortion Analysis of Surface Plasmon Interference Lithography Using Line Grating Structure on Photoresist [J] . Y. M. Kim, K. C. Choi IEEE transactions on nanotechnology . 2016,第2期

机译：利用光致抗蚀剂上的线栅结构对表面等离子干涉光刻的图案变形进行分析
3. Standard AZ 5214E photoresist in laser interference and EBDW lithographies [J] . Skriniarova J., Andok R., Pudis D., Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2015,第Null期

机译：激光干涉和EBDW光刻中的标准AZ 5214E光致抗蚀剂
4. Photoresist characterization for lithography simulation: II. Exposure parameter measurements [C] . Clifford L. Henderson, Univ. of Texas/Austin, Austin, Advances in Resist Technology and Processing XIV . 1997

机译：用于光刻模拟的光刻胶表征：II。曝光参数测量
5. Characterization of extreme ultraviolet lithography photoresists using advanced metrology and fitting techniques. [D] . Kane, Genevieve A. 2014

机译：使用先进的计量学和拟合技术对极端紫外光刻光刻胶进行表征。
6. The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist [O] . Viktor Dan’ko, Ivan Indutnyi, Victor Myn’ko, 2015

机译：使用干涉光刻和硫族化物光刻胶对表面和薄膜进行纳米结构
7. X-ray Exposures of Electro-Deposited Photoresist for Conformal Lithography on Corrugated Surfaces [O] . Frank T. Hartley, Chantal Khan Malekband, Steven Nguyen 2007

机译：用于波纹表面上共形光刻的电沉积光刻胶的X射线曝光
8. X-Ray Exposure of Electron-Deposited Photoresist for Conformal Lithography on Corrugated Surfaces [R] . Hartley, F., Malek, C., Nguyen, S. 1998

机译：用于波纹表面上共形光刻的电子沉积光刻胶的X射线曝光

Photoresist characterization using double exposures with interference lithography

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