...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing
【24h】

Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing

机译：碳共注入和尖峰加亚熔激光退火形成的超浅结

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A leading candidate for the formation of the ultrashallow junctions needed for L_g ≤ 45 nm devices is the combination of coimplantation of a diffusion-retarding species such as carbon with a high temperature, millisecond annealing process after the conventional spike annealing. C coimplantation with B~+ for p-type metal-oxide semiconductor and P~+ for n-type metal-oxide semiconductor combined with conventional spike annealing produces reduced junction depths and improved dopant activation and profile abruptness, compared to similar implants without the coimplanted species. Addition of submelt laser annealing may further improve junction activation, but the dominant impact is gate depletion reduction, in that way, delaying the need to introduce metal gates. Devices show that the overlap capacitance is reduced, consistent with the shallower junction depths and reduced lateral diffusion. The improved dopant activation manifests itself in reduced series resistance and improved I_(on) values. Finally, scanning spreading resistance microscopy measurements confirm the shallow junction depths and reduced lateral diffusion.
机译：L_g≤45 nm器件所需的超浅结形成的一个主要候选方法是在传统的尖峰退火之后，将扩散延迟物质（例如碳）与高温，毫秒级退火过程共同注入。与不采用共注入的类似注入相比，对于P型金属氧化物半导体采用B〜+和对n型金属氧化物半导体进行P〜+进行C共注入，与常规的尖峰退火相结合，可以减小结深，并改善掺杂剂的活化和轮廓突变性。种类。添加亚熔体激光退火可以进一步改善结激活，但是主要的影响是减少栅极耗尽，从而延迟了引入金属栅极的需要。器件表明，重叠电容减小，这与较浅的结深度和减小的横向扩散一致。改善的掺杂剂活化表现为降低的串联电阻和改善的I_（on）值。最后，扫描扩展电阻显微镜测量证实了浅结深度和减少的横向扩散。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号