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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Advances in optical carrier profiling through high-frequency modulated optical reflectance
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Advances in optical carrier profiling through high-frequency modulated optical reflectance

机译：高频调制光反射技术在光载波分析中的进展

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profile for sub-30-nm structures is a key issue. Presently, however, there is no conventional, probe-based (destructive) technique available satisfying the ITRS targeted depth (3%) and carrier level (5%-10%) reproducibility and accuracy. In this work, the authors explore the promising capabilities of nondestructive photomodulated optical reflectance (PMOR) techniques, based on the localized (micrometer beam size) detection of variations in the reflectivity of the sample, due to thermal and plasma (excess carrier) effects as can be generated by a modulated pump laser such as the Therma-Probe~® (TP) system. Earlier and more recent work using low modulation (1 kHz) frequencies has shown that it is possible, but rather tedious, to extract the electric junction depth (at about 10~(18) cm~(-3)) and carrier concentration of chemical vapor deposition grown (CVD) (boxlike) structures based on so-called power curves (where the reflected power of the probe laser is plotted versus the power of the pump laser). In this work the authors focus on high-frequency (1 MHz) PMOR, which gives two (instead of one) independent signals, i.e., the amplitude (A) and phase angle (φ) of the reflected probe beam. It has been proposed earlier and is confirmed in this work that a single simple measurement allows for the direct and easy extraction of the junction depth (X_j) and carrier concentration (N) of boxlike profiles. Furthermore, the shape of the so-called three-dimensional PMOR offset curves (A and φ versus offset), where the distance of the pump relative to the probe beam is varied over several micrometers, might help to obtain information on more complex profiles. The principles allowing for the extraction of arbitrary carrier profiles, with nanometer depth resolution and carrier concentrations between 10~(18) and 10~(21) cm~(-3), from offset curves will be discussed and evidence for the proposed ideas will be given for homogeneously doped material and CVD boxlike structures based on fsem device simulations.
机译：30纳米以下结构的轮廓是关键问题。但是，目前，尚无可满足ITRS目标深度（3％）和载流子水平（5％-10％）可重复性和准确性的常规，基于探针的（破坏性）技术。在这项工作中，作者基于热和等离子体（过量载流子）效应引起的样品反射率变化的局部（微米光束尺寸）检测，探索了无损光调制光反射率（PMOR）技术的有前途的功能。可以通过调制泵浦激光器（例如Therma-Probe〜®（TP）系统）产生。使用低调制（1 kHz）频率的较早和较新的工作表明，提取电结深度（约10〜（18）cm〜（-3））和化学物质的载流子浓度是可能的，但相当乏味。气相沉积生长（CVD）（盒状）结构基于所谓的功率曲线（其中绘制了探测激光器的反射功率与泵浦激光器的功率的关系）。在这项工作中，作者集中于高频（1 MHz）PMOR，它给出了两个（而不是一个）独立的信号，即反射探测光束的幅度（A）和相角（φ）。先前已经提出并在这项工作中得到证实，单个简单的测量就可以直接和轻松地提取出盒状轮廓的结深（X_j）和载流子浓度（N）。此外，泵相对于探测光束的距离在几微米范围内变化的所谓三维PMOR偏移曲线的形状（A和φ对偏移）可能有助于获得有关更复杂轮廓的信息。将讨论从偏移曲线中提取具有纳米深度分辨率和载流子浓度在10〜（18）和10〜（21）cm〜（-3）之间的任意载流子轮廓的原理，并为提出的想法提供证据基于fsem器件仿真，可以得到均匀掺杂的材料和CVD盒状结构。

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