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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Reducing imaging defects in high-resolution photolithography
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Reducing imaging defects in high-resolution photolithography

机译：减少高分辨率光刻中的成像缺陷

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摘要

Photoresist defects can occur in large, seemingly noncritical features in high-resolution photolithography although it is capable of resolving features of much smaller dimensions. Both optical illumination and wafer topography may contribute to the formation of resist defects in large features. This letter examines optical simulations to uncover the specific nature of these resist defects and proposes local correction methods to improve the photolithographic process. For example, adding a back-etched phase feature in the center of a large isolated trench feature reduces the illumination-responsible resist scumming effect, and optimizing the multilayered film stack can eliminate the resist defect when printing a large contact feature on the structured wafer substrate.
机译：光刻胶缺陷可以在高分辨率光刻中的大型，看似非关键的特征中发生，尽管它能够解决尺寸小得多的特征。光学照明和晶片形貌都可能有助于形成较大特征的抗蚀剂缺陷。这封信检查了光学模拟，以揭示这些抗蚀剂缺陷的特殊性质，并提出了局部校正方法以改善光刻工艺。例如，在大的隔离沟槽特征的中心添加回蚀相位特征会降低对照明负责的抗蚀剂浮渣效果，优化多层膜堆叠可以消除在结构化晶圆基板上印刷大接触特征时的抗蚀剂缺陷。

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