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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Effect of temperature on copper damascene chemical mechanical polishing process
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Effect of temperature on copper damascene chemical mechanical polishing process

机译：温度对铜镶嵌化学机械抛光工艺的影响

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摘要

The effects of different process parameters on tribology and surface defects were studied till date, but there has been minimal study to understand the effect of temperature on the copper chemical mechanical polishing (CMP) process. The effect of temperature on tribology and surface defects during copper CMP employing different pad materials and slurries has been explored. From the results, it was seen that the coefficient of friction and removal rate increased with an increase in slurry temperature during polishing. The experimental data indicated that the increase in temperature results in an increase in amounts of metal dishing and metal loss. The dishing and metal loss in the interconnect features initially increased with an increase in temperature and then decreased at elevated temperatures. With an increase in temperature the copper films peeled off from the wafer due to low adhesion with low-k dielectric material at higher temperatures. The electrical properties of the planarized devices showed drastic degradation with increase in dishing values. Also the temperature showed a significant effect on pad physical and mechanical properties with an increase in temperature. The increase in temperature also increased the crystallinity of the copper film.
机译：迄今为止，人们一直研究不同工艺参数对摩擦学和表面缺陷的影响，但对于了解温度对铜化学机械抛光（CMP）工艺的影响的研究很少。已经探索了温度对采用不同垫材料和浆料的铜CMP过程中摩擦学和表面缺陷的影响。从结果可以看出，摩擦系数和去除速率随着抛光过程中浆料温度的升高而增加。实验数据表明温度的升高导致金属凹陷和金属损失的数量增加。互连部件中的凹陷和金属损耗最初随着温度的升高而增加，然后在升高的温度下降低。随着温度的升高，由于在较高温度下与低k电介质材料的粘附力低，铜膜从晶片上剥离了。平面化器件的电性能随着碟形值的增加而急剧下降。随着温度的升高，温度对焊盘的物理和机械性能也显示出显着影响。温度的升高也增加了铜膜的结晶度。

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