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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers
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GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers

机译：基于GaSb的中红外等边三角形谐振器半导体激光器

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摘要

Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 μm cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 μm and a longitudinal mode separation of 100 nm. This mode has a quality factor (～2 × 10~5) that is much larger than the first (～5 × 10~4) and second (～3 × 10~4) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSb/AlGaAsSb/GaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 μm emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA.
机译：对腔边长为10μm的等边三角形谐振器（ETR）的模式特性进行理论计算，结果表明，基本模式（纵向模式指数为25）的波长为2.185μm，纵向模式间隔为100 nm。此模式的品质因数（〜2×10〜5）比一阶（〜5×10〜4）和二阶（〜3×10〜4）模式大得多，这表明应该对单个基本模式进行激光发射。可在很宽的波长调谐范围内访问。基于这种设计的电注入ETR由InGaAsSb / AlGaAsSb / GaSb梯度折射率分离约束异质结构激光二极管晶圆制成，发射波长为2.1μm。该器件实现了在77 K时的单模连续波操作，阈值电流为0.5 mA，单模波长调谐范围为3.25 nm，这是通过将注入电流从0.5 mA更改为6.0 mA来实现的。

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