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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Study Of 193 Nm Photoresist Degradation During Short Time Fluorocarbon Plasma Exposure Ⅲ. Effect Of Fluorocarbon Film And Initial Surface Condition On Photoresist Degradation
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Study Of 193 Nm Photoresist Degradation During Short Time Fluorocarbon Plasma Exposure Ⅲ. Effect Of Fluorocarbon Film And Initial Surface Condition On Photoresist Degradation

机译：短时间氟碳等离子体暴露下193 Nm光致抗蚀剂降解的研究Ⅲ。碳氟化合物薄膜和初始表面条件对光致抗蚀剂降解的影响

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摘要

The effect of fluorocarbon film and surface pretreatments on roughness formation of 193 nm photoresist (PR) during short time fluorocarbon plasma exposure was investigated. The present work complements two earlier reports by this group on surface modifications of 193 nm PR during plasma etching. The authors employed a shutter approach to minimize initial plasma transient effects on processing of PR surfaces. Surface chemical conditions after plasma etching were observed by x-ray photoelectron spectroscopy. The authors investigated the effect of deposited fluorocarbon film and pretreatments using several gas chemistries on PR roughening. Pretreated samples exhibited smaller roughness after plasma etching as compared to specimens processed without pretreatment. Three main mechanisms were identified for surface roughness reduction after pretreatment: (a) the formation of a fluorinated surface layer-having a large amount of fluorine on the PR surface at the beginning of the etch reduces PR surface roughening, (b) the improvement of durability of the PR under plasma exposure by removal of the ester group, and (c) a rapid fluorination and a reduction in the PR etch rate during the initial etch period due to the formation of a protective film on the top of the PR. The authors conclude from this work that the initial surface chemical state is an important factor that determines the degree of surface roughness formation for 193 nm PR during the initial etch period.
机译：研究了碳氟化合物薄膜和表面预处理对短时间碳氟化合物等离子体曝光期间193 nm光致抗蚀剂（PR）粗糙度形成的影响。本工作补充了该小组关于等离子蚀刻过程中193 nm PR的表面改性的两个早期报道。作者采用遮板方法将对PR表面处理的初始等离子体瞬态影响最小化。通过X射线光电子能谱观察等离子体蚀刻后的表面化学条件。作者研究了沉积的碳氟化合物薄膜和使用多种气体化学物质进行预处理对PR粗糙化的影响。与未经预处理的样品相比，经过等离子体刻蚀的预处理样品具有较小的粗糙度。确定了减少预处理后表面粗糙度的三种主要机理：（a）在蚀刻开始时在PR表面上形成大量氟的氟化表面层，从而减少PR表面的粗糙化；（b）提高表面粗糙度。通过除去酯基而在等离子体暴露下PR的持久性，以及（c）由于在PR顶部形成保护膜，因此在初始蚀刻期间快速氟化和PR蚀刻速率降低。作者从这项工作得出结论，初始表面化学状态是决定初始蚀刻期间193 nm PR表面粗糙度形成程度的重要因素。

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