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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Yield improvement of 0.13 μm Cu/low-k dual-damascene interconnection by organic cleaning process
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Yield improvement of 0.13 μm Cu/low-k dual-damascene interconnection by organic cleaning process

机译：通过有机清洗工艺提高了0.13μm的Cu / low-k双金属镶嵌互连的产量

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摘要

Cu/low-k dielectrics are required to reduce resistance-capacitance (RC) delay and parasitic capacitance at the back-end-of-line (BEOL) interconnection. Integration of Cu/low-k dielectrics (black diamond) for BEOL interconnection in 0.13 μm technology has gained wide acceptance in the microelectronics industry in recent years. In this article, the authors discuss the process-integration issues of 0.13 μrn Cu/low-k dual-damascene integration for static random access memory (SRAM) device yield. The same scheme of 0.13 μm Cu/fluorinated silicate glass-based device was used for the full process of making a low-k based device. Black diamond was used as a low-k material with a dielectric constant of 2.95. To reduce the damage of low-k and improve the yield of a low-k based device, H_2O ashing, organic cleaning, and reduced down pressure in chemical-mechanical planarization were selected for the study. Specifically, the cleaning process after the ashing process was very effective for the removal of organic residues from via, trench, and surface contaminants. There was an increase of 40.79% in SRAM device yield compared to the low-k based device without the organic cleaning chemical process. As a result, the authors successfully integrated a 0.13 μm Cu/low-k dual-damascene interconnection with excellent yield performance after the improving process of organic cleaning.
机译：需要使用Cu / low-k电介质来减少电阻电容（RC）延迟和线路后端（BEOL）互连处的寄生电容。近年来，以0.13μm技术集成用于BEOL互连的Cu / low-k电介质（黑菱形）已在微电子行业获得广泛认可。在本文中，作者讨论了用于静态随机存取存储器（SRAM）器件产量的0.13μmCu / low-k双大马士革集成的工艺集成问题。 0.13μm铜/氟化硅酸盐玻璃基器件的相同方案用于制造低k基器件的整个过程。黑金刚石用作介电常数为2.95的低k材料。为了减少低k的损害并提高基于低k的器件的产量，本研究选择了H_2O灰化，有机清洗和降低的化学机械平面化中的低压。具体而言，灰化工艺之后的清洁工艺对于去除通孔，沟槽和表面污染物中的有机残留物非常有效。与不使用有机清洗化学工艺的低k型器件​​相比，SRAM器件的良率提高了40.79％。结果，在改进有机清洗工艺之后，作者成功地集成了0.13μm的Cu / low-k双大马士革互连，并具有出色的成品率性能。

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