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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication
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Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication

机译：显影剂温度对电子束曝光的氢倍半硅氧烷氢致抗蚀剂的影响

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摘要

The effects of developer temperature on hydrogen silsesquioxane (HSQ) resist for the fabrication of ultradense silicon nanowires are reported. At higher developer temperatures, the contrast of HSQ significantly increased and sharply defined gratings were obtained. In addition, higher developer temperature provided larger processing windows for various grating periodicities. Pattern transfer with HSQ masks using both dry and wet etching processes to fabricate silicon nanowires on silicon-on-insulator substrates is demonstrated. 27-nm-period silicon nanowire arrays obtained using the high temperature development along with the two etching processes are presented and discussed.
机译：报道了显影剂温度对氢倍半硅氧烷（HSQ）抗蚀剂对超致密硅纳米线制造的影响。在较高的显影剂温度下，HSQ的对比度明显提高，并且获得了清晰定义的光栅。另外，较高的显影剂温度为各种光栅周期提供了较大的处理窗口。演示了使用干蚀刻和湿蚀刻工艺在HSQ掩模上进行图案转移，以在绝缘体上硅衬底上制造硅纳米线的方法。介绍并讨论了使用高温显影以及两种蚀刻工艺获得的27 nm周期硅纳米线阵列。

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