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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >In situ x-ray absorption near-edge structure analysis for extreme ultraviolet lithography projection optics contamination
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In situ x-ray absorption near-edge structure analysis for extreme ultraviolet lithography projection optics contamination

机译：原位X射线吸收近边缘结构分析用于极端紫外光刻投影光学污染

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摘要

A contamination evaluation system for extreme ultraviolet (EUV) lithography projection optics was developed in the NewSUBARU SR facility, in which in situ surface analysis and elemental concentration mapping were carried out with the use of the x-ray absorption near-edge structure (XANES) method. For concentration mapping, the linearity between the x-ray absorption intensity and contamination thickness was confirmed by examining standard samples. The problem of quantitativity, which was caused by the antagonistic reaction of carbon deposition and surface oxidation on the mirror surface, was successfully solved by taking the ratio of intensities of the upper and lower sides of the absorption edge. Very useful information for protecting the surface of EUV lithography optics was obtained when the in situ XANES analysis was applied to the experiment of EUV irradiation with the introduction of ethanol gas to the vacuum atmosphere.
机译：NewSUBARU SR工厂开发了一种用于极紫外（EUV）光刻投影光学器件的污染评估系统，其中使用X射线吸收近边缘结构（XANES）进行了原位表面分析和元素浓度绘图方法。对于浓度分布图，通过检查标准样品确认了X射线吸收强度和污染厚度之间的线性。通过考虑吸收边缘的上侧和下侧的强度比，成功解决了由碳沉积和镜面表面氧化反应的拮抗反应引起的定量问题。当原位XANES分析应用于将乙醇气体引入真空环境的EUV辐照实验时，获得了非常有用的信息来保护EUV光刻光学器件的表面。

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