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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Oxygen assisted focused electron beam induced deposition of Si-containing materials: Growth dynamics
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Oxygen assisted focused electron beam induced deposition of Si-containing materials: Growth dynamics

机译：氧辅助聚焦电子束诱导的含硅材料沉积：生长动力学

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摘要

The growth dynamics of oxygen assisted focused electron beam induced deposition of Si-containing materials (from SiO_xC_y, to SiO_2) were investigated as a function of relevant process-parameters. The results obtained from organosilanes of different families (alkoxy, alkyl, and isocyanatosilanes) are compared. Residual water molecules in the SEM chamber were found to be responsible for side reactions leading to carbon etching and oxygen incorporation in focused electron beam induced deposition (FEBID) materials and ruled the deposition process during conventional FEBID. Depending on the precursor reactivity to oxygen, the material growth rate either increased or decreased with increasing additional O_2 until it remained constant from 1 SCCM. Accounting for the FEBID material density, oxygen always increased the deposition efficiency in terms of Si atoms deposited per second. Less carbon residues in the deposits were obtained at large replenishment times (above 50 μs) and low dwell times (below 15 μs), which hint to relatively slow process steps in the complex deposition mechanism in our deposition equipment. O_2 assisted FEBID showed to be insensitive to electron density variations, and secondary electrons were demonstrated to have sufficient energy to initiate the oxidation reaction and achieve 90% of the deposition process.
机译：研究了氧辅助聚焦电子束诱导沉积含硅材料（从SiO_xC_y到SiO_2）的生长动力学，该过程是相关工艺参数的函数。比较了从不同族的有机硅烷（烷氧基，烷基和异氰酸根合硅烷）获得的结果。发现在SEM室中残留的水分子是导致副反应的原因，这些副反应导致碳腐蚀和氧掺入聚焦电子束诱导沉积（FEBID）材料中，并控制了常规FEBID期间的沉积过程。取决于前体对氧的反应性，材料生长速率会随着附加O_2的增加而增加或减少，直到从1 SCCM保持恒定为止。考虑到FEBID材料密度，氧气总是以每秒沉积的Si原子的形式提高沉积效率。在较大的补给时间（高于50μs）和较低的停留时间（低于15μs）下，沉积物中的碳残留量较少，这暗示了我们沉积设备中复杂沉积机理中相对缓慢的工艺步骤。 O_2辅助的FEBID对电子密度变化不敏感，并且二次电子具有足够的能量来引发氧化反应并实现90％的沉积过程。

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