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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Geometry impact on ultrahigh resolution pattern collapse
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Geometry impact on ultrahigh resolution pattern collapse

机译：几何形状对超高分辨率图案崩溃的影响

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摘要

Pattern collapse is one critical issue that lithography must overcome to address future high resolution nodes (32 and 22 nm). Published pattern collapse models showed that lines collapse when the capillary pressure exerted by the liquid overcomes the mechanical strength of the material. To simplify equations, those models consider that the maximum capillary pressure is exerted only on one side of the pattern, when the rinse liquid fills the space on one side of the pattern while no liquid remains on the other side. The collapsing behavior of 60 nm dense lines printed with extreme ultraviolet interferometric lithography (EUV-IL) and electron beam lithography (EBL) has been studied. These experiments confirm that this phenomenon can be correctly modeled with an asymmetric rinse liquid filling configuration. Then the influence of the pattern shape of sub-60-nm dense lines on collapse behavior is checked. The authors demonstrate that reentering slope deteriorates the pattern holding, whereas top rounding improves it. Finally, they observe that exposure defaults due to the tool properties such as stitching (EBL) or exposure dose heterogeneity (EUV-IL) considerably influence pattern collapse and should be considered for a better prediction.
机译：图案塌陷是光刻技术必须解决的关键问题，以解决未来的高分辨率节点（32和22 nm）。公开的图案塌陷模型表明，当液体施加的毛细管压力超过材料的机械强度时，线条会塌陷。为简化方程式，这些模型认为，当冲洗液填充图案一侧的空间而另一侧没有液体时，最大毛细管压力仅施加在图案的一侧。研究了用极端紫外干涉光刻（EUV-IL）和电子束光刻（EBL）印刷的60 nm密集线的塌陷行为。这些实验证实，使用不对称冲洗液填充配置可以正确模拟此现象。然后检查亚60 nm密集线的图案形状对塌陷行为的影响。作者证明，重新进入坡度会使图案保持力变差，而顶部变圆会改善它。最后，他们观察到由于诸如缝合（EBL）或曝光剂量异质性（EUV-IL）之类的工具特性而导致的默认曝光会极大地影响图案崩塌，因此应进行更好的预测。

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