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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Application of contrast enhancement layer to 193 nm lithography
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Application of contrast enhancement layer to 193 nm lithography

机译：对比度增强层在193 nm光刻中的应用

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摘要

The feasibility of contrast enhancement layer (CEL) for extending the practical limit of 193 nm lithography was studied using an analytical model, exposed latent image inside the resist, and finite difference time-domain analysis. All studies showed that the CEL is applicable to 193 nm regime and beneficial for obtaining a contrast enhancement effect which appeared to be nonlinear and more effective on the images of low incident contrast. However, because of its nonlinear behavior, material parameters should be carefully chosen and optimized to obtain a large contrast improvement. In addition, thick topcoat induced aberration was also taken into account to evaluate the feasibility of the CEL. As a conclusion, it is shown that the CEL is promising for the use of future technologies.
机译：使用分析模型，抗蚀剂内部曝光的潜像和时域有限差分分析，研究了对比度增强层（CEL）扩展193 nm光刻实际极限的可行性。所有研究表明，CEL适用于193 nm模式，有利于获得对比度增强效果，该效果似乎是非线性的，并且对低入射对比度的图像更有效。但是，由于其非线性行为，应仔细选择和优化材料参数以获得较大的对比度改善。此外，还考虑了厚面涂层引起的像差，以评估CEL的可行性。结论表明，CEL对于使用未来技术很有希望。

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