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首页> 外文期刊>Journal of Wood Chemistry and Technology >THIOPHENE DEPOSITION ON PAPER SURFACE BY PULSED RF-PLASMA
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THIOPHENE DEPOSITION ON PAPER SURFACE BY PULSED RF-PLASMA

机译：脉冲射频等离子体在纸表面的噻吩沉积

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The plasma duty cycle, in addition to power and exposure time, affects the surface atomic composition of thiophene plasma-treated paper. The elemental carbon and sulfur concentration increased from 56.7% to 78.6% and 0% to 13.4%, respectively, while oxygen decreased from 43.3% to 8.0% with the plasma treatment. Relatively large variations in the deposited film-like layer composition could be realized by changing plasma external parameters. The high-resolution (HR) C1s spectra of the thiophene plasma-treated paper clearly exhibit plasma-induced rearrangements and new sulfur functionalities on the paper surface. After a five-hour ex situ doping of thiophene plasma-treated papers with iodine, conductivity ranging from delta = 4.2E-2 to 4.1 S/cm was obtained. The low relative F/C atomic ratio after TFAA derivatization indicates that no hydroxyl groups were present on the paper surface after the thiophene plasma treatment.
机译：除功率和曝光时间外，等离子体占空比还影响噻吩等离子体处理过的纸的表面原子组成。通过等离子体处理，元素碳和硫的浓度分别从56.7％增至78.6％和0％增至13.4％，而氧从43.3％降低至8.0％。通过改变等离子体外部参数，可以实现沉积的膜状层组成的相对较大的变化。噻吩等离子体处理过的纸的高分辨率（HR）C1s光谱清楚地显示出等离子体引起的重排和纸表面上的新硫官能团。在用碘对噻吩等离子体处理过的纸进行五小时异位掺杂后，获得的电导率范围为delta = 4.2E-2至4.1 S / cm。 TFAA衍生化后，相对F / C原子比低，这表明噻吩等离子体处理后，纸张表面没有羟基。

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