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Effect of Texture and Structure of Carbon Sources on Synthesis of β-SiC Thin Film

机译:碳源的织构和结构对β-SiC薄膜合成的影响

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摘要

A thin film including β-silicon carbide was synthesized by a reaction of gaseous silicon monoxide and carbon source. Gaseous silicon monoxide was obtained through high temperature heating of solid silicon monoxide. Polyimide films (PIF) with different thickness and PIF-derived carbon films heat-treated at 1000, 2000 and 2500℃ were used as a carbon source. Effect of texture and structure of the carbon source films on synthesis of β-silicon carbide film was investigated through X-ray diffraction analysis and scanning electron observation of the carbon source and reacted samples. The sample obtained had film shape similar to that of the carbon source film. Two reacted regions were found on both surfaces of the source film, as well as the un-reacted region in the middle of the samples in some cases. In the case of thinner source film, there was no un-reacted region. A constituent of the reacted regions was mixture of β-silicon carbide and un-reacted carbon. Effect of texture and structure of the carbon source films on synthesis of β-silicon carbide film was clarified. Reactivity of the carbon sources with silicon monoxide gas is low for the carbon sources with relatively high graphite crystallinity and high orientation of graphite texture.
机译:通过气态一氧化硅与碳源的反应合成了包括β-碳化硅的薄膜。通过高温加热固体一氧化硅获得气态一氧化硅。碳源采用了不同厚度的聚酰亚胺薄膜(PIF)和在1000、2000和2500℃下热处理过的PIF衍生碳薄膜。通过X射线衍射分析和碳源及反应样品的扫描电子观察,研究了碳源膜的织构和结构对β-碳化硅膜合成的影响。获得的样品具有与碳源膜相似的膜形状。在某些情况下,在源膜的两个表面上以及在样品中间的未反应区域中都发现了两个反应区域。在较薄的源膜的情况下,没有未反应的区域。反应区域的组成是β-碳化硅和未反应的碳的混合物。阐明了碳源膜的织构和结构对β-碳化硅膜合成的影响。对于具有相对较高的石墨结晶度和较高的石墨织构取向的碳源,碳源与一氧化硅气体的反应性较低。

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