Single Layer Al-ni Interconnections For Tft-lcds Using Direct Contacts With Ito And A-si

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Single Layer Al-ni Interconnections For Tft-lcds Using Direct Contacts With Ito And A-si

机译：使用带有Ito和A-si的直接触点的Tft-lcds单层Al-ni互连

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Direct contacts between aluminum alloys and thin film transistors (TFTs) contact layers were studied. An Al-Ni alloy was found to be contacted directly with an indium tin oxide (ITO) layer successfully without conventional barrier metal. The alloy was also demonstrated to be contacted directly to an amorphos-Si (a-Si) layer, if the a-Si surface is pretreated with nitridation. This development, made for the first time in TFT technology, enables direct contacts of aluminum interconnections with both ITO and a-Si. The technology has a high potential of negating the conventionally used barrier metals, making the gate, source and drain lines structures all single layered, and thus significantly improving productivity and reducing cost of TFT-LCD production. The technology has already been implemented in actual production of LCD-TFTs.

机译：研究了铝合金与薄膜晶体管（TFT）接触层之间的直接接触。发现Al-Ni合金成功地与铟锡氧化物（ITO）层直接接触，而没有常规的阻挡金属。如果a-Si表面经过氮化处理，则该合金也被证明直接与amorphos-Si（a-Si）层接触。 TFT技术的首次开发使铝互连与ITO和a-Si直接接触。该技术具有否定常规使用的阻挡金属的潜力，使栅极，源极和漏极线结构全部单层，从而显着提高了生产率并降低了TFT-LCD生产成本。该技术已经在LCD-TFT的实际生产中实施。

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《Kobelco technology review》 |2007年第27期|8-12|共5页
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1. Single Layer Al-Ni Interconnections for TFT-LCDs using Direct Contacts with ITO and a-Si [J] . Toshihiro Kugimiya, Yoichiro Yoneda, Kazuo Yoshikawa, SID International Symposium: Digest of Technology Papers . 2007,第2期

机译：使用与ITO和a-Si的直接接触的TFT-LCD的单层Al-Ni互连
2. Single Layer Al-Ni-La-Si Interconnections for Source and Drain of LTPS-TFT LCDs using Direct Contacts with both ITO and poly-Si [J] . Toshihiro Kugimiya, Yoichiro Yoneda, Eisuke Kusumoto, SID International Symposium: Digest of Technology Papers . 2008,第1期

机译：使用与ITO和多晶硅直接接触的LTPS-TFT LCD的源极和漏极的单层Al-Ni-La-Si互连
3. Numerical Analysis of Selective ITO/a-Si:H Contacts in Heterojunction Silicon Solar Cells: Effect of Defect States in Doped a-Si:H Layers on Performance Parameters [J] . Balent Jost, Smole Franc, Topic Marko, Photovoltaics, IEEE Journal of . 2021,第3期

机译：异质结硅太阳能电池的选择性ITO / A-Si的数值分析：H异轴硅太阳能电池的触点：缺陷状态在掺杂A-Si：H层性能参数中的影响
4. DIRECT PULSED LASER INTERFERENCE TEXTURING OF ZNO:AL FRONT CONTACT LAYERS FOR A-SI:H/μC-SI:H TANDEM SOLAR CELLS [C] . S. Ring, F. Ruske, B. Stannowski, European Photovoltaic Solar Energy Conference and Exhibition . 2013

机译：A-SI：H /μC-SI：H串联太阳能电池Zno：Al前接触层的直接脉冲激光干涉织构
5. Growth, Characterization and Contacts to Ga2O 3 Single Crystal Substrates and Epitaxial Layers [D] . Yao, Yao. 2017

机译：Ga2O 3单晶基板和外延层的生长，表征和接触
6. Mechanical Properties of ZTO ITO and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells [O] . Claudia Hengst, Siegfried B Menzel, Gayatri K Rane, 2017

机译：用于柔性薄膜太阳能电池的ZTOITO和a-Si：H多层膜的机械性能
7. Controlled deposition and multi-layer architecturing of single biomolecules using automated directed capillary assembly and nano-contact printing processes [O] . Hélène Cayron, Benjamin Berteloite, Christophe Vieu, 2015

机译：使用自动定向毛细管组装和纳米接触印刷工艺进行单层生物分子的受控沉积和多层架构
8. Well-Passivated a-Si:H Back Contacts for Double Heterojunction Silicon Solar Cells [R] . Page, M. R. 2006

机译：用于双异质结硅太阳能电池的良好钝化的a-si：H背触点

Single Layer Al-ni Interconnections For Tft-lcds Using Direct Contacts With Ito And A-si

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