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首页> 外文期刊>Photovoltaics, IEEE Journal of >Numerical Analysis of Selective ITO/a-Si:H Contacts in Heterojunction Silicon Solar Cells: Effect of Defect States in Doped a-Si:H Layers on Performance Parameters
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Numerical Analysis of Selective ITO/a-Si:H Contacts in Heterojunction Silicon Solar Cells: Effect of Defect States in Doped a-Si:H Layers on Performance Parameters

机译：异质结硅太阳能电池的选择性ITO / A-Si的数值分析：H异轴硅太阳能电池的触点：缺陷状态在掺杂A-Si：H层性能参数中的影响

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摘要

The effects of defect states in doped thin-film amorphous-silicon layers (p-a-Si:H and n-a-Si:H) and at heterointerfaces of the passivated crystalline-silicon (c-Si) wafer on the performance of heterojunction silicon solar cells are investigated using optoelectrical simulations. We used a state-of-the-art numerical model of a silicon heterojunction solar cell, including indium-tin-oxide (ITO) contacts as semiconductor layers, applying the accompanying tunneling mechanisms. We show that increasing the dangling-bond density in the p-a-Si:H reduces the conversion efficiency of the device more than in the n-a-Si:H, independent of the doping type of the c-Si wafer and illumination side of the device. Simulations revealed that this is due to: a larger ITO work-function mismatch with the p-a-Si:H than the n-a-Si:H; a larger valence-band offset at i-a-Si:H/n-c-Si interface at the p-side compared to the conduction-band offset at the n-side i-a-Si:H/n-c-Si; and asymmetric distribution of defects in the doped a-Si:H layers. The effects of individual defect-state parameters in doped a-Si:H layers and c-Si heterointerfaces are shown. We demonstrate that the decrease in conversion efficiency due to increased dangling-bond states in doped layers is primarily a consequence of a reduced fill-factor and open-circuit voltage. We explain the phenomenon by charge-redistribution linked to increased dangling-bond density in p-a-Si:H, whereas the increased free-charge recombination has only little effect on the short-circuit-current density over a wide range of defect-state variation. Besides quantitative results of defect-state variation on solar cell performance, this article aims to offer a thorough understanding of the physical processes in the device, governing these effects.
机译：缺陷状态在掺杂的薄膜非晶 - 硅层（PA-Si：H和Na-Si：H）和钝化结晶 - 硅（C-Si）晶片的异偶壳上的效果在异质结硅太阳能电池的性能下的钝化晶体 - 硅（C-Si）晶片使用光电模拟研究。我们使用了硅异质结太阳能电池的最先进的数值模型，包括氧化铟锡（ITO）触点作为半导体层，施加伴随的隧道机构。我们表明，增加PA-Si中的悬空粘合密度：H降低了装置的转换效率，而不是在Na-Si：H中，与装置的C-Si晶片和照明侧的掺杂类型无关。模拟显示，这是由于：具有P-A-Si：H的较大ITO工作功能不匹配，而不是N-A-Si：H;与N端I-A-Si：H / N-C-Si的导通带偏移相比，在P侧的I-A-Si：H / N-C-Si接口处的较大价带偏移。掺杂A-Si：H层中的缺陷的不对称分布。示出了单个缺陷状态参数在掺杂A-Si：H层和C-Si异化件中的影响。我们证明，由于掺杂层增加的悬空 - 粘合状态导致的转换效率的降低主要是降低填充因子和开路电压的结果。我们通过连接的电荷再分配来解释现象，以增加PA-Si：h中的悬空 - 粘合密度，而自由电荷重组增加几乎没有对在广泛缺陷状态变化范围内的短路电流密度影响。除了定量结果的太阳能电池性能对太阳能电池性能的变化之外，本文旨在对设备中的物理过程提供全面的理解，管辖这些效果。

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