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Improved a-Si: H absorber layer for a-Si single-junction and multi-junction thin-film silicon solar cells
Improved a-Si: H absorber layer for a-Si single-junction and multi-junction thin-film silicon solar cells
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机译:用于a-Si单结和多结薄膜硅太阳能电池的改进的a-Si:H吸收层
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摘要
In order to improve a thin film solar cell with an amorphous silicon absorber layer being in single or in tandem configuration, the addressed absorber layer of a-Si:H is manufactured by plasma enhanced vapor deposition in an RF-SiH4 plasma, wherein the deposition is performed at at least one of at the process pressure below 0.5 mbar and of at an RF power density below 370 W/14000 cm2.
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机译:为了改进具有单层或串联结构的非晶硅吸收层的薄膜太阳能电池,通过在RF-SiH4等离子体中进行等离子体增强气相沉积来制造所提及的a-Si:H吸收层:至少在低于0.5 mbar的工艺压力和低于370 W / 14000 cm2的RF功率密度下进行。
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