首页> 外国专利> IMPROVED A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELL

IMPROVED A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELL

机译:改进的A-SI单和多结薄膜硅太阳能电池A-SI:H吸收层

摘要

The invention relates to a method for manufacturing a thin film solar cell, comprising the sequential steps of a) depositing a positively doped Si layer (3), b1) depositing a first intrinsic a-Si:H layer (21) at a first deposition rate, b2) depositing a second intrinsic a-Si:H layer (22) at a second deposition rate, and c) depositing a negatively doped Si layer (5), whereby the second deposition rate is greater than the first deposition rate. The thin film solar cell manufactured is characterized by an increased initial and stabilized efficiency while at the same time the overall deposition rate, even by depositing two different intrinsic layers (21, 22), is kept at a reasonable and economic level.
机译:本发明涉及一种制造薄膜太阳能电池的方法,包括以下顺序步骤:a)沉积正掺杂的Si层(3),b1)在第一沉积中沉积第一本征a-Si:H层(21) b)以第二沉积速率沉积第二本征a-Si:H层(22),以及c)沉积负掺杂的Si层(5),由此第二沉积速率大于第一沉积速率。所制造的薄膜太阳能电池的特征在于提高的初始效率和稳定的效率,同时,即使通过沉积两个不同的本征层(21、22),总沉积速率也保持在合理和经济的水平。

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