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A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELLS
A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELLS
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机译:A-SI单和多结薄膜硅太阳能电池的A-SI:H吸收层
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摘要
In order to improve a thin film solar cell with an amorphous silicon absorber layer being in single or in tandem configuration, the addressed absorber layer of a-Si:H is manufactured by plasma enhanced vapor deposition in an RF-SiH4 plasma, wherein the deposition is performed at at least one of at the process pressure below 0.5 mbar and of at an RF power density below 370 W/14000 cm2.
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机译:为了改进具有单层或串联结构的非晶硅吸收层的薄膜太阳能电池,通过在RF-SiH 4 < / Sub>等离子体,其中至少在以下条件之一进行沉积:在0.5 mbar以下的工艺压力下和在370 W / 14000 cm 2 Sub>的RF功率密度下进行的沉积。
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