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A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELL

机译：A-SI单和多结薄膜硅太阳能电池的A-SI：H吸收层

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摘要

The invention relates to a method for manufacturing a thin film solar cell, comprising the sequential steps of a) depositing a positively doped Si layer (3), b1) depositing a first intrinsic a-Si:H layer (21) at a first deposition rate, b2) depositing a second intrinsic a-Si:H layer (22) at a second deposition rate, and c) depositing a negatively doped Si layer (5), whereby the second deposition rate is greater than the first deposition rate. The thin film solar cell manufactured is characterized by an increased initial and stabilized efficiency while at the same time the overall deposition rate, even by depositing two different intrinsic layers (21, 22), is kept at a reasonable and economic level.

机译：本发明涉及一种制造薄膜太阳能电池的方法，包括以下步骤：a）沉积正掺杂的Si层（ 3 ），b1）沉积第一本征a-Si：H层（ 21 ）处于第一沉积速率，b2）以第二沉积速率沉积第二本征a-Si：H层（ 22 ），并且c）负沉积掺杂的硅层（ 5 ），从而第二沉积速率大于第一沉积速率。所制造的薄膜太阳能电池的特征在于提高的初始效率和稳定的效率，同时，即使沉积两个不同的本征层（ 21、22 ），总沉积速率也保持在合理范围内和经济水平。 展开▼

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公开/公告号US2014102522A1

专利类型

公开/公告日2014-04-17

原文格式PDF

申请/专利权人 MARIAN FECIORU-MORARIU;BOGDAN MEREU;
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申请/专利号US201113885439

发明设计人 MARIAN FECIORU-MORARIU;BOGDAN MEREU;
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申请日2011-11-14

分类号H01L31/075;H01L31/076;H01L31/18;

国家 US

入库时间 2022-08-21 16:08:34

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1. 用于a-Si单结和多结薄膜硅太阳能电池的改善的a-Si:H吸收器层 [P] . 中国专利： CN103222071A . 2013-07-24

2. 用于a-Si单结和多结薄膜硅太阳能电池的改进的a-Si:H吸收层 [P] . 中国专利： CN103238219A . 2013-08-07

3. IMPROVED A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELLS [P] . 欧洲知识产权局专利： EP2612367A1 . 2013-07-10

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4. A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELLS [P] . 美国专利： US2013174899A1 . 2013-07-11

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5. IMPROVED A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELLS [P] . 世界知识产权组织专利： WO2012028717A1 . 2012-03-08

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