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机译:退火温度对脉冲磁控溅射纳米晶Ag:SnO_2薄膜性能的影响
SEC-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra, Portugal,Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City, South Korea;
SEC-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra, Portugal;
Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City, South Korea;
Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City, South Korea;
SEC-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra, Portugal;
thin films; nanostructures; sputtering; crystal structure; electrical properties;
机译:脉冲磁控溅射制备纳米晶Au:Ag:SnO_2薄膜
机译:退火温度对脉冲直流磁控溅射沉积ZrB 2薄膜结构性能的影响
机译:退火温度对脉冲直流反应磁控溅射制备ZnO:Al薄膜性能的影响
机译:直流磁控溅射在镍层上生长纺锤状ZnO纳米晶薄膜及其热退火性能
机译:通过大功率脉冲磁控溅射沉积的银膜的电学和光学性质。
机译:低温下大功率脉冲磁控溅射在铀上沉积的TiN膜
机译:退火温度对脉冲DC磁控溅射沉积的ZrB2膜结构性能的影响