Temperature-dependent properties of Pd/GaN Schottky type hydrogen sensors with Cl_2 plasma surface treatments

著录项

• 来源
  《Materials Chemistry and Physics》 |2012年第1期|150-157|共8页
• 作者

  Tai-You Chen; Huey-Ing Chen; Po-Shun Chiu; Chien-Chang Huang; Chi-Shiang Hsu; Po-Cheng Chou; Rong-Chau Liu; Wen-Chau Liu;

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• 作者单位

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Chung Shan Institute of Science and Technology, Tao-Yuan, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  schottky diode; surface roughness; plasma treatment; GaN; Pd;

  机译：肖特基二极管表面粗糙度;等离子处理氮化镓;钯;