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首页> 外文期刊>Materials Chemistry and Physics >Effect of Cu/Al ratio on the properties of CuAlSe_2 thin films prepared by co-evaporation
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Effect of Cu/Al ratio on the properties of CuAlSe_2 thin films prepared by co-evaporation

机译：Cu / Al比对共蒸镀CuAlSe_2薄膜性能的影响

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摘要

Cu-rich, near-stoichiometric and Al-rich CuAlSe_2 thin films were deposited by elemental co-evaporation technique on glass substrates held at 673 K. Powder X-ray diffraction studies revealed that the Cu-rich CuAlSe_2 films contain Cu_2Se as second phase while near-stoichiometric and Al-rich CuAlSe_2 films are single phase. The Cu-rich and near-stoichiometric films are found to have chalcopyrite structure and the Al-rich films have defect chalcopyrite structure due to formation of ordered vacancy compound CuAl_2Se_(3.5). The optical band gaps of Cu-rich, near-stoichiometric and Al-rich films determined from optical absorption studies are found to be 2.48 eV, 2.62 eV and 2.87 eV respectively. The electrical conductivity studies revealed that the Cu-rich and stoichiometric films are p-type and Al-rich films are n-type conducting. The resistivity of the films is found to increase with decrease in Cu/Al ratio.
机译：通过元素共蒸发技术在673 K的玻璃基板上沉积富Cu，近化学计量和富Al的CuAlSe_2薄膜。粉末X射线衍射研究表明，富Cu的CuAlSe_2薄膜包含Cu_2Se作为第二相，而近化学计量和富铝的CuAlSe_2薄膜是单相的。由于形成有序的空位化合物CuAl_2Se_（3.5），发现富含铜的和接近化学计量的膜具有黄铜矿结构，并且富含铝的膜具有缺陷的黄铜矿结构。由光吸收研究确定的富Cu，近化学计量和富Al薄膜的光学带隙分别为2.48 eV，2.62 eV和2.87 eV。电导率研究表明，富铜和化学计量的薄膜为p型，富铝的薄膜为n型导电。发现膜的电阻率随着Cu / Al比的降低而增加。

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