A hydrogen sensitive Pd/GaAs Schottky diode sensor

Shiou-Ying Cheng

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A hydrogen sensitive Pd/GaAs Schottky diode sensor

机译：氢敏感的Pd / GaAs肖特基二极管传感器

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摘要

In this work, we will study and fabricate a new, simple and small-size hydrogen sensitive palladium (Pd) membrane/semiconductor Schottky diode sensor. Experimental results reveal that, during the hydride formation process, the forward- and reverse-biased currents are increased by the increase of hydrogen concentration. It also demonstrates that the Schottky barrier height is indeed decreased with increasing the hydrogen concentration. Therefore, the studied device can be used in fabricating a high-performance hydrogen sensitive sensor.

机译：在这项工作中，我们将研究和制造一种新型，简单且小型的氢敏感钯（Pd）膜/半导体肖特基二极管传感器。实验结果表明，在氢化物形成过程中，氢浓度的增加会增加正向和反向偏置电流。这也表明肖特基势垒高度的确随着氢浓度的增加而降低。因此，所研究的装置可以用于制造高性能的氢敏感传感器。

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来源
《Materials Chemistry and Physics》 |2003年第2期|p.525-528|共4页
作者
Shiou-Ying Cheng;
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作者单位

Department of Electrical Engineering, Oriental Institute of Technology, 58, Sze-Chuan Road, Sec.2, Pan-Chiao 22064, Taipei Hsien, Taiwan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;工程基础科学;
关键词
schottky diode; palladium membrane; hydride formation process;

机译：肖特基二极管钯膜氢化物形成过程;

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专利

1. Effect of Surface Modification on the Properties of Hydrogen-Sensitive GaAs-Based Schottky Diodes [J] . S. V. Tikhov, E. L. Shobolov, S. B. Levichev, Technical physics . 2003,第5期

机译：表面改性对氢敏GaAs基肖特基二极管性能的影响
2. A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor [J] . Kun-Wei Lin, Huey-Ing Chen, Chun-Tsen Lu, Semiconductor science and technology . 2003,第7期

机译：氢感测Pd / InGaP金属半导体（MS）肖特基二极管氢传感器
3. Effect of a modified cover layer on the properties of hydrogen-sensitive Pd/GaAs/InGaAs diode heterostructures with quantum wells [J] . Tikhov SV, Karpovich IA, Gushchina YY, Technical physics letters: Letters to the Russian journal of applied physics . 2007,第8期

机译：改性覆盖层对氢敏感的具有量子阱的Pd / GaAs / InGaAs二极管异质结构性能的影响
4. A Hydrogen Sensitive Pd/GaiAs Schottky Diode Sensor [C] . W.C. Liu, H.I. Chen, S.Y. Cheng, Preprints of International Conference on Membrane Science and Technology (ICMST'98) June 9-13, 1998 Beijing, China . 1998

机译：氢敏感的Pd / GaiAs肖特基二极管传感器
5. Effects of surface roughness on palladium-silicon Schottky diode hydrogen sensors using laser ablation. [D] . Van Suetendael, Nancy Jean. 2008

机译：表面粗糙度对使用激光烧蚀的钯硅肖特基二极管氢传感器的影响。
6. Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles [O] . Karel Zdansky 2011

机译：基于石墨-InP或石墨-GaN肖特基势垒的高灵敏度氢传感器电泳沉积钯纳米颗粒
7. A New Hydrogen Sensor Based on a Pt/GaAs Schottky Diode [O] . Lechuga, Laura M., Calle Martín, Ana, Golmayo, Dolores, 1991

机译：基于Pt / GaAs肖特基二极管的新型氢传感器

A hydrogen sensitive Pd/GaAs Schottky diode sensor

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