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Numerical investigation of Directional Solidification process for improving multi-crystalline silicon ingot quality for photovoltaic applications

机译:定向凝固工艺在光伏应用中提高多晶硅锭质量的数值研究

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Numerical simulation is used as a comprehensive tool for analysis and optimization of the multi-crystalline silicon (mc-Si) growth by the Directional Solidification (DS) method. We have used a transient global heat transfer model to optimize the temperature profile of the DS process to produce high-quality multi-crystalline silicon ingots for solar cell application. The melt-crystal interface shape, impurities and von Mises stress were studied by the numerical simulation with different temperature profiles. A slightly convex interface shape, lower thermal stress and lower impurities in the me-Si were obtained due to the lower temperature gradient by the optimized temperature profile. Simulation results show that the optimized temperature profile is particularly suitable for high quality me-Si ingot. (C) 2019 Elsevier B.V. All rights reserved.
机译:数值模拟用作通过定向凝固(DS)方法分析和优化多晶硅(mc-Si)生长的综合工具。我们已经使用瞬态全局传热模型来优化DS工艺的温度曲线,以生产用于太阳能电池应用的高质量多晶硅锭。通过不同温度曲线的数值模拟研究了熔体-晶体界面的形状,杂质和冯·米塞斯应力。通过优化的温度曲线,由于较低的温度梯度,在me-Si中获得了略呈凸形的界面形状,较低的热应力和较低的杂质。仿真结果表明,优化的温度曲线特别适用于高质量的Me-Si晶锭。 (C)2019 Elsevier B.V.保留所有权利。

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