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首页> 外文期刊>Materials Letters >Growth and vacuum post-annealing effect on the properties of the new absorber CuSbS_2 thin films
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Growth and vacuum post-annealing effect on the properties of the new absorber CuSbS_2 thin films

机译：生长和真空后退火对新型吸收剂CuSbS_2薄膜性能的影响

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摘要

Post-growth treatments in vacuum atmosphere were performed on CuSbS_2 films prepared by the single-source thermal evaporation method on glass substrates. The films were annealed in vacuum atmosphere for 2 h in temperature range 130-200 ℃. The effect of this thermal treatment on the structural, optical and electrical properties of the films was studied. X-ray diffraction (XRD) patterns indicated that the films exhibited an amorphous structure for annealing temperature below 200 ℃ and a polycrystalline structure with CuSbS_2 principal phase. For the films annealed at temperatures below 200 ℃ one direct optical transition in range 1.8-2 eV was found. For the films annealed at 200 ℃, two optical direct transitions emerged at 1.3 and 1.79 eV corresponding to the CuSbS_2 and SB_2S_3 values respectively. The electrical measurements showed a conversion from low resistivities (3.10~(-2)-9.10~(-2)) Ω cm for the samples annealed at temperatures below 200 ℃ to relatively high resistivities (2 Ω cm) for the samples annealed at 200 ℃. In all cases the samples exhibited p-Ztype conductivity.
机译：在真空气氛下对通过单源热蒸发法在玻璃基板上制备的CuSbS_2膜进行了后生长处理。将膜在真空气氛中在130-200℃的温度范围内退火2 h。研究了这种热处理对薄膜的结构，光学和电学性质的影响。 X射线衍射（XRD）图谱表明，退火温度低于200℃时，薄膜呈现非晶态结构，主相CuSbS_2为多晶结构。对于在低于200℃的温度下退火的薄膜，发现在1.8-2 eV范围内有一个直接的光学跃迁。对于在200℃退火的薄膜，在1.3和1.79 eV处出现了两个光学直接跃迁，分别对应于CuSbS_2和SB_2S_3值。电学测量表明，从低于200℃退火的样品的低电阻率（3.10〜（-2）-9.10〜（-2））Ωcm转换为在200℃退火的样品的相对高电阻率（2Ωcm） ℃。在所有情况下，样品均表现出p-Z型电导率。

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