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On the interaction between slip dislocations and twins in HCP Zr

机译:HCP Zr中滑脱位错与孪晶之间的相互作用

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We investigate the effect of stored prismatic dislocations on the onset and growth of {1012} and {1122} twins in pure Zr. A set of temperature jump tests, some combined with a strain path changes, are performed here to exploit the fact that slip-dominated plastic behavior occurs at room temperature and twin-dominated plastic behavior at lower temperatures. In some of the tests the material is pre-strained to various levels at room temperature to introduce prismatic slip dislocations, and then reloaded at liquid nitrogen. In other tests the material is pre-strained at liquid nitrogen, to different levels and in different directions, to generate either {1012} tensile or {1122} compressive twins, and then reloaded at room temperature. These tests are interpreted with a recently developed dislocation-density based single crystal model in order to elucidate slip-twin interactions operating at the nanometer scale. Our analysis suggests that (1) stored dislocations increase the resistance for further slip and for {1122} twin propagation, but not for {1012} twin propagation; (2) the onset of {1122} twinning is insensitive to the amount of stored dislocations; (3) substantial slip occurs within the twin oriented domains, which can either increase or decrease the hardening rate by comparison to the one without twins.
机译:我们研究了在纯Zr中储存的棱柱形位错对{1012}和{1122}孪晶的发生和生长的影响。这里进行了一组温度跳跃测试,其中一些与应变路径的变化相结合,以利用以下事实:在室温下发生滑移为主的塑性行为,而在较低温度下为双主导塑性行为。在某些测试中,将材料在室温下预应变至各种水平,以引入棱柱形错位,然后在液氮中重新加载。在其他测试中,将材料在液氮下以不同的水平和不同的方向预应变,以产生{1012}拉伸或{1122}压缩双胞胎,然后在室温下重新加载。这些测试用最近开发的基于位错密度的单晶模型解释,以阐明在纳米尺度上发生的滑移-孪生相互作用。我们的分析表明,(1)储存的位错增加了进一步滑动和{1122}孪生传播的阻力,但没有{1012}孪生传播的阻力; (2){1122}孪生的发生对存储的位错量不敏感; (3)在孪晶取向区域内发生大量滑移,与没有孪晶的情况相比,可以增加或降低硬化速率。

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