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首页> 外文期刊>Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing >Improved high-Q microwave dielectric material using B_2O_3-doped MgNb_2O_6 ceramics
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Improved high-Q microwave dielectric material using B_2O_3-doped MgNb_2O_6 ceramics

机译：使用B_2O_3掺杂的MgNb_2O_6陶瓷的改良高Q微波介电材料

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摘要

In this paper, the microstructures and microwave dielectric properties of MgM_2O_6 ceramics doped with B_2O_3 are investigated. The formation of an impurity phase is not detected by X-ray diffraction pattern and the grain growth is apparent with increasing the sintering temperature from scanning electron microscopy results. With adding the sintering aid B_2O_3, not only decreasing the sintering temperature but also enhancing the quality factor (Q) value are obtained. The maximum Q × f value obtained in this study is 115,800(GHz) with 0.25 wt.% B_2O_3 added sintered at 1260 ℃ that possesses a dielectric constant (ε_r) of 21.5 and the temperature coefficients of resonant frequency (τ_f) of -48 ppm/℃. The correlation between dielectric properties and the microstructures with different doped amounts of B_2O_3 is also discussed.
机译：研究了掺有B_2O_3的MgM_2O_6陶瓷的微观结构和微波介电性能。通过X射线衍射图未检测到杂质相的形成，并且随着扫描电子显微镜结果的烧结温度升高，晶粒生长明显。通过添加烧结助剂B_2O_3，不仅降低了烧结温度，而且提高了品质因数（Q）值。在此研究中获得的最大Q×f值为115,800（GHz），添加了0.25 wt。％的B_2O_3在1260℃烧结，其介电常数（ε_r）为21.5，共振频率温度系数（τ_f）为-48 ppm /℃。还讨论了B_2O_3掺杂量不同时介电性能与微观结构之间的相关性。

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