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首页> 外文期刊>Materials Science and Engineering. A, Structural Materials >Dislocation multiplication rate in the early stage of germanium plasticity
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Dislocation multiplication rate in the early stage of germanium plasticity

机译：锗可塑性早期的位错倍增率

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摘要

A set of constitutive equations describing the plasticity of semiconductors is compared with the results of mechanical tests. Constant strain-rate compression tests are interrupted before the peak of the initial multiplication yield point, i.e. at the moment of intense dislocation multiplication, by transient tests (stress-relaxations and creep tests). Various laws for dislocation multiplication are used in constitutive modelling and their predictions are compared with experimental transient curves. A generalized law is proposed, which perfectly fits all the transient tests data, provided each sample is considered separately. It seems necessary to account for the properties of dislocation sources in the multiplication law, at least at the early stages of plasticity.
机译：将一组描述半导体可塑性的本构方程与机械测试的结果进行比较。通过瞬态测试（应力松弛和蠕变测试），恒定应变率压缩测试在初始倍增屈服点的峰值之前即强位错倍增的瞬间中断。本构模型中使用了位错相乘的各种定律，并将其预测值与实验瞬态曲线进行了比较。提出了一个通用法则，如果每个样本都分开考虑，则该法则完全适合所有瞬态测试数据。至少在可塑性的早期，似乎有必要在乘法定律中考虑位错源的特性。

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