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首页> 外文期刊>Materials Science and Engineering >Electrical transport properties and complex impedance investigation of Fe~(3+) and La~(3+) co-doping (Pb,Sr)TiO_3 thin films
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Electrical transport properties and complex impedance investigation of Fe~(3+) and La~(3+) co-doping (Pb,Sr)TiO_3 thin films

机译:Fe〜(3+)和La〜(3+)共掺杂(Pb,Sr)TiO_3薄膜的电输运性质和复阻抗研究

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This work investigates the impact of Fe3+ and La3+ co-doping on the structural, electrical transport and dielectric relaxation properties of PST thin films. XRD and Raman spectroscopy data show that the Fe3+ and La3+ doping induce a pseudocubic to tetragonal structural phase transformation. Schottky barrier heights calculated from temperature-dependent current-voltage plots for the PST, PSTF and PSLTF films decreased to 1.20, 0.59, and 0.36 eV, respectively. This behavior was directly assigned to the increase in oxygen vacancies. The frequency dependence of sample's impedance revealed the presence of the typical electrical relaxation phenomenon in all films. Activation energies calculated from the imaginary part of the impedance are 1.73 and 0.57 eV: the high value (1.73 eV, PST films) suggests the presence of long-range oxygen vacancy diffusion, while the lower one (0.57 eV PSLTF films) should be associated to the short-range oxygen vacancy diffusion.
机译:这项工作研究了Fe3 +和La3 +共掺杂对PST薄膜的结构,电传输和介电弛豫性能的影响。 XRD和拉曼光谱数据表明,Fe 3+和La 3+掺杂引起伪立方到四方结构的相变。根据PST,PSTF和PSLTF薄膜的温度相关电流-电压图计算得出的肖特基势垒高度分别降至1.20、0.59和0.36 eV。该行为直接归因于氧空位的增加。样品阻抗的频率依赖性揭示了所有薄膜中都存在典型的电弛豫现象。根据阻抗的虚部计算出的活化能为1.73和0.57 eV:较高的值(1.73 eV,PST膜)表明存在长距离的氧空位扩散,而较低的值(0.57 eV PSLTF膜)则应关联到短程氧空位扩散。

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