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首页> 外文期刊>Materials Science and Engineering >Highly transparent zinc nitride thin films by RF magnetron sputtering with enhanced optoelectronic behavior
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Highly transparent zinc nitride thin films by RF magnetron sputtering with enhanced optoelectronic behavior

机译：通过射频磁控溅射提高光电性能的高透明氮化锌薄膜

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摘要

Transparent semiconducting nitrides are important materials for many modern technologies. Here, optical transparent semiconducting zinc nitride (Zn3N2) thin films have been developed by reactive RF magnetron sputtering at different nitrogen (N2) contents. The deposited films are found to be cubic with preferred orientation of (3 2 1) plane. High optical transmittance (∼96%) and refractive index (1.32) at the wavelength of 500 nm and optical band gap of 3.1 eV have been observed for the films deposited at 45% nitrogen content. The investigation on other optical constants such as extinction coefficient and dielectric constant as a function of wavelength shows enhanced optical behavior. The Zn3N2thin films show n-type conductivity with carrier concentration of ∼1020–1021 cm−3, mobility in the range of 4 to 56 cm2/Vs (which is 1–2 times higher than the values of TCOs) and resistivity around 10−4 Ωcm as a function of nitrogen content. These results suggested that Zn3N2thin films could perform as potential transparent semiconductors for thin film solar cells.
机译：透明的半导体氮化物是许多现代技术的重要材料。在此，已经通过反应性RF磁控溅射在不同的氮（N 2）含量下开发了光学透明的半导体氮化锌（Zn 3 N 2）薄膜。发现沉积的膜是立方的，其优选取向为（3 2 1）平面。对于氮含量为45％的薄膜，在500 nm的波长处具有高的透光率（〜96％）和折射率（1.32），光带隙为3.1 eV。对诸如消光系数和介电常数的其他光学常数作为波长的函数的研究显示出增强的光学性能。 Zn3N2薄膜具有n型导电性，载流子浓度约为1020–1021 cm−3，迁移率范围为4至56 cm2 / Vs（比TCO值高1-2倍），电阻率约为10− 4Ωcm作为氮含量的函数。这些结果表明，Zn3N2薄膜可以作为薄膜太阳能电池的潜在透明半导体。

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