机译:连续退火对ZnO基金属-半导体-金属紫外光电探测器性能的影响
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;
Suzhou R&D Center, East China Institute of Photo-electronic, Norinco Group, Suzhou 215163, China;
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;
ZnO; MSM photodetector; Anneal; Schottkv contact;
机译:退火温度对Ga掺杂ZnO薄膜金属-半导体-金属紫外光电探测器性能的影响
机译:退火对4H-SiC金属-半导体-金属紫外光电探测器性能的影响
机译:通过原位改变在其螺旋脱位上的一维ZnO纳米棒的原位改变改善了背照射GaN基金金属紫外光探测器的性能
机译:基于ZnO紫外线光电探测器的金属半导体 - 金属结构
机译:ZnO和ZnO基薄膜合金退火的函数的温度依赖带边缘分布分析
机译:ZnO纳米棒的选择性区域生长和SiO2钝化作用的金属-半导体-金属近紫外(〜380 nm)光电探测器
机译:退火温度对Ga掺杂ZnO薄膜金属 - 半导体 - 金属紫外光电探测器特性的影响