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Effects of continuous annealing on the performance of ZnO based metal-semiconductor-metal ultraviolet photodetectors

机译:连续退火对ZnO基金属-半导体-金属紫外光电探测器性能的影响

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摘要

In this study, metal-semiconductor-metal (MSM) Schottky ultraviolet (UV) photodetectors were based on c-axis preferred oriented zinc oxide (ZnO) films, which were prepared on quartz substrates by radio frequency (RF) magnetron sputtering technique. The responsivity of the photodetector was enlarged greatly after annealing the MSM device. Meanwhile, the enhancement in the dark current that resulted from the experiment was accompanied by the increasing annealing temperature. The origin is preliminarily discussed combining the observations of dark currents and responsivities. The physical mechanism of the continuous annealing is proposed on the basis of metal-semiconductor contact theory and diffusion effect. By this model, Au atoms from the electrode play an important role in the Schottky barrier during annealing process. These results demonstrate that a simple route to improve the responsivities of photodetectors can be realized easily by annealing the devices.
机译:在这项研究中,金属-半导体-金属(MSM)肖特基紫外线(UV)光电探测器基于c轴首选取向的氧化锌(ZnO)膜,该膜是通过射频(RF)磁控溅射技术在石英基板上制备的。 MSM器件退火后,光电探测器的响应度大大提高。同时,由实验引起的暗电流的增加伴随着退火温度的升高。结合暗电流和响应度的观察对起源作了初步讨论。基于金属-半导体接触理论和扩散效应,提出了连续退火的物理机理。通过该模型,来自电极的金原子在退火过程中在肖特基势垒中起着重要作用。这些结果表明,通过使器件退火,可以容易地实现改善光电检测器的响应性的简单途径。

著录项

  • 来源
    《Materials Science and Engineering》 |2014年第mayajuna期|67-71|共5页
  • 作者单位

    School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;

    School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;

    School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;

    Suzhou R&D Center, East China Institute of Photo-electronic, Norinco Group, Suzhou 215163, China;

    School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;

    School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;

    School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;

    School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;

    School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnO; MSM photodetector; Anneal; Schottkv contact;

    机译:氧化锌;MSM光电探测器;退火;肖特科夫联系方式;

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