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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations
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Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations

机译：通过原位改变在其螺旋脱位上的一维ZnO纳米棒的原位改变改善了背照射GaN基金金属紫外光探测器的性能

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摘要

It is a critical challenge to realize efficient GaN-based UV photodetectors (UV-PDs) due to the existence of high-density dislocations in the epilayers prepared by heteroepitaxy. In this paper, the method of in-situ modifying the screw dislocations in GaN-based materials with one-dimensional (1D) ZnO nanorods by screw dislocation-driven self-assembled solution growth is developed to engineer and improve the photoelectric performances of the back-illuminated metal-semiconductor-metal (MSM) structure p-GaN UV-PDs. The results show that the in-situ grown 1D ZnO nanorods on the dislocations plays the roles of passivating the dislocations to suppress the dark current, improving the spectral response intensity and extending the spectral response band of the MSM structure UV-PDs. The in-situ modification of 1D ZnO nanomaterials can be developed into a method to engineer and modify the defects viz. threading dislocations of the GaN-based semiconductors so as to achieve the purpose of regulating the performance of the related optoelectronic devices, which can be extended to other material systems of optoelectronic devices. (C) 2018 Elsevier B.V. All rights reserved.
机译：由于杂肝制备的脱落剂中的高密度脱位存在，实现有效的GaN基紫外光探测器（UV-PDS）是一项重要的挑战。在本文中，通过螺杆脱位驱动的自组装溶液生长开发了用一维（1D）ZnO纳米棒的GaN基材料中的原位改变螺杆脱位的方法，并改善了背部的光电表演 - 溶融物金属半导体 - 金属（MSM）结构P-GaN UV-PD。结果表明，位于脱位上的原位生长的1D ZnO纳米码在钝化脱位抑制暗电流，提高光谱响应强度并延伸MSM结构UV-PD的光谱响应带的作用。可以将1D ZnO纳米材料的原位修改成为工程师的方法和修改缺陷viz。 GaN基半导体的穿线脱位，以达到调节相关光电器件的性能的目的，这可以扩展到光电器件的其他材料系统。 （c）2018年elestvier b.v.保留所有权利。

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