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首页> 外文期刊>Materials Science and Engineering >Structural, morphological and magnetic characteristics of Tb-implanted GaN and AlGaN films
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Structural, morphological and magnetic characteristics of Tb-implanted GaN and AlGaN films

机译：掺Tb的GaN和AlGaN薄膜的结构，形貌和磁性

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摘要

Diluted-magnetic GaN∶Tb and AlGaN∶Tb films have been fabricated by implanting Tb~+ ions into c-plane (0001)GaN and AlGaN films and a subsequent annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of X-ray diffraction (XRD), atomic force microscopy (AFM) and superconducting quantum interference device (SQUID), respectively. The XRD and AFM analyses show that the annealing process can effectively recover the crystalline degradation caused by implantation. According to the SQUID analysis, both the GaN∶Tb and the AlGaN∶Tb films exhibit clear room-temperature ferromagnetism. It is very interesting to find the saturation magnetization value of the AlGaN∶Tb sample is almost two times that of GaN∶Tb sample. The possible origin of the ferromagnetism of the samples was discussed briefly.
机译：通过将Tb〜+离子注入到c面（0001）GaN和AlGaN膜中并随后进行退火工艺来制造稀磁GaN∶Tb和AlGaN∶Tb膜。分别通过X射线衍射（XRD），原子力显微镜（AFM）和超导量子干涉仪（SQUID）研究了样品的结构，形态和磁学特性。 XRD和AFM分析表明，退火工艺可以有效地恢复注入引起的晶体降解。根据SQUID分析，GaN∶Tb和AlGaN∶Tb膜均显示出清晰的室温铁磁性。有趣的是，发现AlGaN∶Tb样品的饱和磁化强度几乎是GaN∶Tb样品的两倍。简要讨论了样品铁磁性的可能来源。

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  • 来源
    《Materials Science and Engineering》 |2013年第6期|349-353|共5页
  • 作者

    Xingguo　Gao; Chao Liu; Chunhai Yin; Dongyan　Tao; Cheng　Yang; Baoyuan Man;

  • 作者单位

    College of Physics and Electronics, Shandong Normal University, Jinan 250014, China School of Science. Shandong Polytechnic University, Jinan 250353, China;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    College of Physics and Electronics, Shandong Normal University, Jinan 250014, China;

    College of Physics and Electronics, Shandong Normal University, Jinan 250014, China;

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  • 正文语种 eng
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  • 关键词

    GaN; AlGaN; Diluted magnetic semiconductors; Ion implantation;

    机译：氮化镓;氮化铝镓;稀释的磁性半导体;离子注入;

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