Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure

Dana Skacelova; Vladimir Danilov; Jan Schaefer; Antje Quade; Pavel Stahel; Mirko Cernak; Juergen Meichsner

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Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure

机译：DCSBD中的室温等离子体氧化：一种在大气压下制备二氧化硅薄膜的新方法

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摘要

In this paper a new process for the preparation of thin silicon dioxide (SiO_2) film is presented: the oxidation of c-Si (111) surface in atmospheric pressure plasma at room temperature. Diffuse coplanar surface barrier discharge (DCSBD) at atmospheric pressure in air and oxygen atmosphere has been used.The oxidation rate and the thickness of oxidized layers were estimated by ellipsometry. The structure and the chemical composition of oxidized layers were investigated by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray (EDX) analysis. Scanning electron microscopy (SEM) was used to observe the morphology of the layer surface. It was found that stoichiometric SiO_2 layers were obtained with oxidation rates comparable to thermal oxidation.

机译：本文提出了一种制备二氧化硅薄层（SiO_2）薄膜的新方法：室温下常压等离子体中c-Si（111）表面的氧化。使用大气和氧气在大气压力下的扩散共面表面势垒放电（DCSBD），通过椭偏仪估算氧化速率和氧化层厚度。通过红外反射吸收光谱（IRRAS），X射线光电子能谱（XPS）和能量色散X射线（EDX）分析研究了氧化层的结构和化学组成。使用扫描电子显微镜（SEM）观察层表面的形态。发现以与热氧化相当的氧化速率获得化学计量的SiO 2层。

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来源
《Materials Science and Engineering》 |2013年第9期|651-655|共5页
作者
Dana Skacelova; Vladimir Danilov; Jan Schaefer; Antje Quade; Pavel Stahel; Mirko Cernak; Juergen Meichsner;
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作者单位

Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlarska 2, 611 37 Brno, Czech Republic;

Institute of Physics, University Greifswald, Felix-Hausdorff-Strasse 6,17487 Greifswald, Germany;

Leibniz Institute for Plasma Science and Technology (INP) Greifswald e,V., Felix-Hausdorff-Strasse 2, 17489 Creifswald, Germany;

Leibniz Institute for Plasma Science and Technology (INP) Greifswald e.V., Felix-Hausdorff-Strasse 2, 17489 Creifswald, Germany;

Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlarska 2, 611 37 Brno, Czech Republic;

Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlarska 2, 611 37 Brno, Czech Republic;

Institute of Physics, University Greifswald, Felix-Hausdorff-Strasse 6,17487 Greifswald, Germany;

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正文语种 eng
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关键词
Atmospheric pressure plasma; Plasma oxidation; Silicon dioxide; Coplanar DBD;

机译：大气压等离子体;等离子体氧化;二氧化硅;共面DBD;

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1. Formation of silicon dioxide layers at low temperatures (150–400?°C) by atmospheric pressure plasma oxidation of silicon [J] . Science and technology of advanced materials . 2007,第3期

机译：大气压等离子体氧化硅在低温（150–400？C）下形成二氧化硅层
2. Formation of silicon dioxide layers at low temperatures (150-400℃) by atmospheric pressure plasma oxidation of silicon [J] . H. Kakiuchi, H. Ohmi, M. Harada, Science and Technology of Advanced Materials . 2007,第3期

机译：常压等离子体氧化硅在低温（150-400℃）下形成二氧化硅层
3. Novel low temperature atmospheric pressure plasma jet systems for silicon dioxide and poly-ethylene thin film deposition [J] . Liu W.-J., Wang R.-C. Surface & Coatings Technology . 2011,第5期

机译：用于二氧化硅和聚乙烯薄膜沉积的新型低温大气压等离子体喷射系统
4. STUDY OF PRECURSORS FOR ATMOSPHERIC PRESSURE PLASMA ENHANCED CVD (AP-PECVD) OF SILICON DIOXIDE FILMS [C] . Sergei E Alexandrov, Michael L Hitcbman, Neil McSporran Electrochemical Society Meeting and International Symposium on Chemical Vapor Deposition XVI and EUROCVD 14 Conference v.1; 20030427-20030502; Paris; FR . 2003

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5. A study of particle formation and transport during thermal chemical vapor deposition (CVD) of silicon dioxide films and high-density plasma CVD of poly silicon films. [D] . Kim, Taesung. 2002

机译：对二氧化硅膜的热化学气相沉积（CVD）和多晶硅膜的高密度等离子体CVD过程中颗粒形成和传输的研究。
6. Insights into the Role of Plasma in Atmospheric Pressure Chemical Vapor Deposition of Titanium Dioxide Thin Films [O] . Seongchan Kang, Rodolphe Mauchauffé, Yong Sung You, -1

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7. Large temperature range model for the atmospheric pressure chemical vapor deposition of silicon dioxide films on thermosensitive substrates [O] . Konstantina Christina Topka, George Alexander Chliavoras, François Senocq, 2020

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8. Index of refraction versus oxygen partial pressure for tantalum oxide and silicon dioxide films produced by ion beam deposition [R] . Goward, W. D. , Petersen, H. E. , Dijaili, S. P. , 1998

机译：离子束沉积产生的氧化钽和二氧化硅薄膜的折射率与氧分压的关系

Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure

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