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首页> 外文期刊>Materials Science and Engineering >Defect annealing processes for polycrystalline silicon thin-film solar cells
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Defect annealing processes for polycrystalline silicon thin-film solar cells

机译：多晶硅薄膜太阳能电池的缺陷退火工艺

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摘要

A variety of defect healing methods was analyzed for optimization of polycrystalline silicon (poly-Si) thin-film solar cells on glass. The films were fabricated by solid phase crystallization of amorphous silicon deposited either by plasma enhanced chemical vapor deposition (PECVD) or by electron-beam evaporation (EBE). Three different rapid thermal processing (RTP) set-ups were compared: A conventional rapid thermal annealing oven, a dual wavelength laser annealing system and a movable two sided halogen lamp oven. The two latter processes utilize focused energy input for reducing the thermal load introduced into the glass substrates and thus lead to less deformation and impurity diffusion. Analysis of the structural and electrical properties of the poly-Si thin films was performed by Suns-Voc measurements and Raman spectroscopy. 1 cm~2 cells were prepared for a selection of samples and characterized by Ⅰ-Ⅴ-measurements. The poly-Si material quality could be extremely enhanced, resulting in increase of the open circuit voltages from about 100mV (EBE) and 170mV (PECVD) in the untreated case up to 480 mV after processing.
机译：分析了多种缺陷修复方法，以优化玻璃上的多晶硅（poly-Si）薄膜太阳能电池。通过通过等离子体增强化学气相沉积（PECVD）或通过电子束蒸发（EBE）沉积的非晶硅的固相结晶来制造薄膜。比较了三种不同的快速热处理（RTP）设置：传统的快速热退火炉，双波长激光退火系统和可移动的两侧卤素灯烘箱。后两个过程利用集中的能量输入来减少引入玻璃基板的热负荷，从而减少变形和杂质扩散。通过Suns-Voc测量和拉曼光谱分析对多晶硅薄膜的结构和电性能进行分析。制备1 cm〜2个细胞用于样品选择，并通过Ⅰ-Ⅴ测量表征。可以极大地提高多晶硅材料的质量，从而使开路电压从未经处理的情况下的大约100mV（EBE）和170mV（PECVD）增加到处理后的480 mV。

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