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Thermal crosstalk in arrays of Ⅲ-N-based Lasers

机译：Ⅲ-N基激光器阵列中的热串扰

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This paper presents a 3D comprehensive thermal-electrical self-consistent model of the continuous-wave (CW) operation of one-dimensional arrays of Ⅲ-N-based laser diodes at room-temperature (RT). Their performance is mostly limited by thermal processes, in particular by thermal crosstalk between array emitters. Based on data collected from a range of secondary sources, the temperature dependence of the thermal and electrical conductivities of Ⅲ-N materials used to manufacture nitride-based devices is shown to be a function of the thickness, aluminum mole fractions and Si- and Mg-doping levels of the nitride layers. The impact of substrate width and thickness on increasing the efficiency of heat-flux transport and reducing thermal crosstalk is investigated. As expected, the application of a top-mounted diamond heat spreader was found to have considerable influence on the thermal crosstalk between array emitters, enabling the RT CW operation of laser diode arrays with additional emitters.
机译：本文提出了基于Ⅲ-N族激光二极管的一维阵列在室温（RT）下连续波（CW）操作的3D综合热电自洽模型。它们的性能主要受到热处理的限制，特别是受到阵列发射器之间的热串扰的限制。根据从一系列次级来源收集的数据，用于制造氮化物基器件的Ⅲ-N材料的热导率和电导率与温度的关系与厚度，铝摩尔分数以及Si和Mg呈函数关系。氮化物层的掺杂水平。研究了衬底宽度和厚度对提高热通量传输效率和减少热串扰的影响。不出所料，发现顶部安装的金刚石散热器的应用对阵列发射器之间的热串扰有相当大的影响，从而使得带有附加发射器的激光二极管阵列能够进行RT CW操作。

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