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首页> 外文期刊>Materials Science and Engineering >Influence of substrate bias voltage on the microstructure and residual stress of CrN films deposited by medium frequency magnetron sputtering
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Influence of substrate bias voltage on the microstructure and residual stress of CrN films deposited by medium frequency magnetron sputtering

机译：衬底偏压对中频磁控溅射沉积CrN薄膜组织和残余应力的影响

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摘要

In this study, CrN films were deposited on stainless steel and Si (111) substrates via medium frequency magnetron sputtering under a systematic variation of the substrate bias voltage. The influence of the substrate bias voltage on the structural and the mechanical properties of the films were investigated. It is observed that there are two clear regions: (1) below -300 V, and (2) above -300 V. For the former region, the (111) texture is dominated as the substrate bias voltage is increased to -200V. The lattice parameter is smaller than that of CrN reported in the ICSD standard (4.140 A) and the as-deposited films exhibit tensile stress. Meanwhile, the surface roughness decreases and the N concentration show a slow increase. For the latter region, the (2 0 0)-oriented structure is formed. However, the lattice parameter is larger as compared with the value reported in the ICSD standard, and the surface roughness increases and the N concentration decreases obviously. In this case, the compressive stress is obtained.
机译：在这项研究中，CrN薄膜通过中频磁控溅射在不锈钢和Si（111）基板上沉积，并且系统地改变了基板偏置电压。研究了衬底偏置电压对薄膜结构和力学性能的影响。观察到有两个清晰的区域：（1）在-300 V以下，和（2）在-300 V以上。对于前一个区域，随着衬底偏置电压增加到-200V，（111）纹理占主导地位。晶格参数小于ICSD标准（4.140 A）中报告的CrN的参数，并且沉积后的膜表现出拉应力。同时，表面粗糙度降低并且N浓度显示缓慢增加。对于后一个区域，形成（2 0 0）取向的结构。但是，晶格参数与ICSD标准中报告的值相比更大，并且表面粗糙度增加并且N浓度明显降低。在这种情况下，获得压应力。

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  • 来源
    《Materials Science and Engineering》 |2011年第11期|p.850-854|共5页
  • 作者

    Qinghua Kong; Li Ji; Hongxuan Li; Xiaohong Liu; Yongjun Wang; Jianmin Chen; Huidi Zhou;

  • 作者单位

    State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People's Republic of China,Graduate University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;

    State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People's Republic of China;

    State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People's Republic of China;

    State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People's Republic of China;

    State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People's Republic of China,Graduate University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;

    State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People's Republic of China;

    State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People's Republic of China;

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  • 正文语种 eng
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  • 关键词

    CrN films; Medium frequency magnetron sputtering; Substrate bias voltage; Microstructure; Residual stress;

    机译：CrN薄膜;中频磁控溅射;基板偏置电压;微观结构残余应力;

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