...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Transactions on Electrical and Electronic Materials >Effect of Substrate Bias Voltage on the Properties of Hafnium Nitride Films Deposited by Radio Frequency Magnetron Sputtering Assisted by Inductive Coupled Nitrogen Plasma
【24h】

Effect of Substrate Bias Voltage on the Properties of Hafnium Nitride Films Deposited by Radio Frequency Magnetron Sputtering Assisted by Inductive Coupled Nitrogen Plasma

机译：衬底偏置电压对感应耦合氮等离子体辅助射频磁控溅射沉积氮化Film薄膜性能的影响

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasma-assisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage ( ) was varied from -50 to -150 V to accelerate the effects of nitrogen ions ( ) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 (bias voltage) exhibited higher hardness than other films.
机译：通过感应耦合氮等离子体辅助射频磁控溅射将氮化f（HfN）薄膜沉积到硅基板上。制备薄膜时无需有意地加热基板，基板的负偏压（）在-50至-150 V之间变化，以加速氮离子（）对基板的影响。 X射线衍射仪图案表明，膜的结构受到负衬底偏压的强烈影响，并且在-100（偏压）的沉积条件下观察到了HfN（100）平面中的薄膜结晶。原子力显微镜结果表明，表面粗糙度也随衬底偏置电压而显着变化。在-150（偏压）条件下沉积的膜比其他膜具有更高的硬度。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号