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首页> 外文期刊>Materials Science and Engineering >Microstructure and electrical properties of Sm_2O_3 doped Bi_2O_3-based ZnO varistor ceramics
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Microstructure and electrical properties of Sm_2O_3 doped Bi_2O_3-based ZnO varistor ceramics

机译：Sm_2O_3掺杂Bi_2O_3基ZnO压敏陶瓷的微观结构和电学性能。

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摘要

The dependence of the bulk density, microstructure and dc electrical properties of bismuth oxide (Bi_2O_3 )-based zinc oxide (ZnO) varistor ceramics for various samarium oxide (Sm_2O_3) contents was investigated. The value of bulk density was found to 5.43-5.50 gcm~-3 with Sm_2O_3 (mol %) content. The maximum value of bulk density is observed to be 5.50 for 0.30 mol % Sm_2O_3 containing varistor ceramics. The grain sizes for all the samples calculated from the scanning electron micrographs were found to decrease as Sm_2O_3 increases. The presence of ZnO phases, Bi-rich phases, spinel phases and Sm_2O_3 phases were observed in the samples by the energy dispersive X-ray analysis and X-ray diffraction analysis. As the Sm_2O_3 amount increased in the Bi_2O_3-based ZnO varistor ceramics, the nonlinear coefficient,α increased up to 0.10 mol %, reaching a maximum value of 58 and then decreased. The breakdown electric field, E_b, increased with the increase of Sm_2O_3 content with a maximum value of 3220V cm~(-1) for the 0.75 mol % Sm_2O_3 doped ZnO varistor ceramics. The leakage current, I_L, showed a minimum value of 1.10 μA for the composition of 0.30 mol % Sm_2O_3 doped Bi_2O_3-based ZnO varistor ceramics. The 0.30 mol ％ Sm_2O_3-doped Bi_2O_3-based ZnO varistor ceramics sintered at 1200℃ exhibited a good stability for dc accelerated aging stress of 0.90V, _(mA)/90℃/12h.
机译：研究了氧化铋（Bi_2O_3）基氧化锌（ZnO）压敏陶瓷的体积密度，微观结构和直流电性能对各种氧化mar（Sm_2O_3）含量的依赖性。发现具有Sm_2O_3（mol％）含量的堆积密度值为5.43-5.50 gcm〜-3。对于含有0.30mol％的Sm_2O_3的压敏陶瓷，观察到堆密度的最大值为5.50。发现由扫描电子显微照片计算的所有样品的晶粒尺寸随着Sm_2O_3的增加而减小。通过能量色散X射线分析和X射线衍射分析观察到样品中存在ZnO相，Bi富相，尖晶石相和Sm_2O_3相。随着Bi_2O_3基ZnO压敏陶瓷中Sm_2O_3含量的增加，非线性系数α增大至0.10 mol％，最大值达到58，然后减小。对于0.75mol％掺杂Sm_2O_3的ZnO压敏陶瓷，击穿电场E_b随Sm_2O_3含量的增加而增加，最大值为3220V cm〜（-1）。对于0.30 mol％Sm_2O_3掺杂的Bi_2O_3基的ZnO压敏电阻陶瓷的组成，泄漏电流I_L的最小值为1.10μA。在1200℃烧结0.30 mol％Sm_2O_3掺杂Bi_2O_3基ZnO压敏陶瓷的直流加速老化应力为0.90V，_（mA）/ 90℃/ 12h具有良好的稳定性。

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