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首页> 外文期刊>Physica, B. Condensed Matter >Microstructure and electrical properties of Ho_2O_3 doped Bi_2O_3-based ZnO varistor ceramics
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Microstructure and electrical properties of Ho_2O_3 doped Bi_2O_3-based ZnO varistor ceramics

机译：Ho_2O_3掺杂Bi_2O_3基ZnO压敏电阻陶瓷的微观结构和电性能

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摘要

The microstructure and electrical properties of Ho_2O_3 doped Bi_2O_3-based ZnO varistor ceramics were investigated. The bulk density varies between 5.41 and 5.47 g cm~(-3) with the maximum value of 5.47 g cm~(-3) for 0.50 mol% Ho _2O_3 content. The average grain size for all the samples was calculated from the scanning electron micrographs and were found between 5.1 and 7.1 μm. The microstructure of the prepared samples shows a decrease in grain size of ZnO phase with Ho_2O_3 doping. The energy dispersive X-ray analysis and X-ray diffraction analysis of the samples show the presence of ZnO, Bi-rich, spinel Zn_7Sb_2O_(12) and Ho_2O_3-based phases. The nonlinear coefficient, α, obtained from electric fieldcurrent density plots has a maximum value of 78 for the ceramics with 0.50 mol% Ho_2O_3 content. The leakage current, I_L, has a minimum value of 1.30 μA for the 0.50 mol% Ho_2O_3 doped ZnO varistor ceramics. The breakdown field, E_b, was found to increase with Ho_2O_3 content.
机译：研究了Ho_2O_3掺杂Bi_2O_3基ZnO压敏陶瓷的微观结构和电学性能。堆密度在5.41至5.47g cm〜（-3）之间变化，对于0.50mol％的Ho _2O_3含量，最大值为5.47g cm〜（-3）。从扫描电子显微照片计算出所有样品的平均晶粒尺寸，并且发现其在5.1至7.1μm之间。制备的样品的微观结构表明，Ho_2O_3掺杂使ZnO相的晶粒尺寸减小。样品的能量色散X射线分析和X射线衍射分析表明存在ZnO，Bi富集，尖晶石Zn_7Sb_2O_（12）和Ho_2O_3基相。从电场电流密度图获得的非线性系数α对于具有0.50 mol％Ho_2O_3含量的陶瓷具有最大值78。对于掺杂0.50 mol％Ho_2O_3的ZnO压敏电阻陶瓷，漏电流I_L的最小值为1.30μA。发现击穿场E_b随Ho_2O_3含量的增加而增加。

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