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An investigation on preparation of CIGS targets by sintering process

机译：烧结法制备CIGS靶的研究

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Pressureless sintering process was used to fabricate CIGS targets with CU_2Se, In_2Se_3, and Ga_2Se_3 as raw powders mixed according to the stoichiometry of CuIn_(0.72)Ga_(0.28)Se_2 (CIGS). The results showed that only Culno.7Gao.3Se2 phase can be detected in the sintered targets. The pores in sintered specimen become smaller and distribute more homogenously under the conditions of finer powders and higher cold pressure. Both mass loss caused by the formation of volatile phase relating to Ga and volume expansion occur during the sintering process, which result in the decrease of density. The tendency of anti-densification becomes stronger under the conditions of coarser powders and higher cold pressure. The sintering process and causes for anti-densification were discussed. Finally, a hot pressing process was carried out, which was proved to be fairly effective to increase the density of CIGS target. The fabricated target can be used for magnetron-sputtering deposition of CIGS absorbers.
机译：根据CuIn_（0.72）Ga_（0.28）Se_2（CIGS）的化学计量，采用无压烧结工艺制备了以CU_2Se，In_2Se_3和Ga_2Se_3作为原始粉末混合的CIGS靶材。结果表明，在烧结靶中仅能检测到Culno.7Gao.3Se2相。在更细的粉末和更高的冷压条件下，烧结试样的孔变得更小并且分布更均匀。在烧结过程中，既会发生因与Ga有关的挥发相的形成而引起的质量损失，又会发生体积膨胀，从而导致密度降低。在较粗的粉末和较高的冷压条件下，抗致密化的趋势变得更强。讨论了烧结过程和抗致密化的原因。最后，进行了热压工艺，事实证明该工艺可以有效提高CIGS靶材的密度。所制造的靶可以用于CIGS吸收体的磁控溅射沉积。

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