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Al doping effect on electrical and dielectric aging behavior against impulse surge in ZPCCYA-based varistors

机译：铝掺杂对基于ZPCCYA的压敏电阻的电涌和电介质老化行为的抵抗冲击浪涌的影响

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摘要

Al doping effect on electrical and dielectric aging behavior against impulse surge in the ZPCCYA-based varistors was investigated. The clamp ratio (K) decreased in accordance with increasing Al_2O_3 content up to 0.005 mol%. A further increase in Al_2O_3 doping level caused K to increase. The K value at a surge current of 5 A and 10A for the varistor doped with 0.005 mol% Al_2O_3 exhibited 1.49 and 1.57, respectively. Furthermore, the K value at a higher surge current of 1200 A was 2.44 for the varistors doped with 0.005 mol% and 0.01 mol% Al_2O_3. The best electrical and dielectric stability against impulse surge current of 1200 A was obtained at 0.01 mol% Al_2O_3, where %ΔE_(1 mA/cm)~2 = -1.0%, %Δα = 0%, %ΔJ_L = -3.9%, %Δε'_(APP) = +1.4%, and %Δ tan δ = -10.5%. Conclusively, Al_2O_3 content was optimized at 0.01 mol% in terms of the surge absorption capability.
机译：研究了铝掺杂对基于ZPCCYA的压敏电阻的电涌和电介质老化行为的抗冲击浪涌的影响。钳位比（K）随着Al_2O_3含量的增加直至0.005mol％而降低。 Al_2O_3掺杂水平的进一步增加导致K的增加。对于掺有0.005mol％Al_2O_3的压敏电阻，在5A和10A的浪涌电流下的K值分别显示为1.49和1.57。此外，对于掺杂有0.005mol％和0.01mol％的Al_2O_3的压敏电阻，在1200A的较高浪涌电流下的K值为2.44。在0.01 mol％Al_2O_3下获得了针对1200 A的最佳电和介电稳定性，其中％ΔE_（（1 mA / cm）〜2 = -1.0％，％Δα= 0％，％ΔJ_L= -3.9％， ％Δε'_（APP）= +1.4％，％Δtanδ= -10.5％。最后，就浪涌吸收能力而言，Al_2O_3含量优化为0.01 mol％。

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