...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Science and Engineering >Mott transition in Ga-doped Mg_xZn_(1-x)O: A direct observation
【24h】

Mott transition in Ga-doped Mg_xZn_(1-x)O: A direct observation

机译：Ga掺杂的Mg_xZn_（1-x）O中的Mott跃迁：直接观察

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper reports the direct evidence for Mott transition in Ga-doped Mg_xZn_(1-x)O thin films. Highly transparent Ga-doped Mg_xZn_(1-x)O thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg_(0.1) Zn_(0.9)O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg_(0.1) Zn_(0.9)O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg_(0.1) Zn_(0.9)O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg_(0.1) Zn_(0.9)O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 × 10~(-2) Ω cm at 40mK, which is characteristic of the metal-insulator transition region. Temperature-dependent conductivity σ(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T~(-3/2).
机译：本文报道了掺杂Ga的Mg_xZn_（1-x）O薄膜中Mott跃迁的直接证据。使用脉冲激光沉积在c面蓝宝石衬底上生长高度透明的掺杂Ga的Mg_xZn_（1-x）O薄膜。选择0.1原子％，0.5原子％和1原子％的Ga掺杂的Mg_（0.1）Zn_（0.9）O薄膜在250 K至40 mK的温度范围内进行电阻率测量。 Ga掺杂0.1 at。％的Mg_（0.1）Zn_（0.9）O薄膜表现出典型的绝缘体行为，Ga掺杂1 at。％的Mg_（0.1）Zn_（0.9）O薄膜表现出典型的金属似行为。行为。 0.5at。％Ga掺杂的Mg_（0.1）Zn_（0.9）O薄膜显示电阻率随温度降低而增加；电阻率在40mK时达到1.15×10〜（-2）Ωcm的值，这是金属-绝缘体过渡区的特征。低温范围内随温度变化的电导率σ（T）表明，电子-电子散射是主要的移相机制。发现非弹性散射时间随T〜（-3/2）变化。

著录项

  • 来源
    《Materials Science and Engineering》 |2010年第3期|P.90-92|共3页
  • 作者

    Wei Wei; Sudhakar Nori; Chunming Jin; Jagdish Narayan; Roger J. Narayan; Dmtri Ponarin; Alex Smirnov;

  • 作者单位

    Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, United States;

    rnDepartment of Materials Science and Engineering, North Carolina State University, Raleigh, NC, United States;

    rnDepartment of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115, United States;

    rnDepartment of Materials Science and Engineering, North Carolina State University, Raleigh, NC, United States;

    rnDepartment of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115, United States;

    rnDepartment of Chemistry, North Carolina State University, Raleigh, NC, United States;

    rnDepartment of Chemistry, North Carolina State University, Raleigh, NC, United States;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    mott transition; magnesium zinc oxide; gallium doping; thin film; pulsed laser deposition;

    机译：莫特过渡氧化镁锌;镓掺杂薄膜;脉冲激光沉积;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号