...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Science and Engineering >Direct Preparation Of Crystalline Cuins_2 Thin Films By Radiofrequency Sputtering
【24h】

Direct Preparation Of Crystalline Cuins_2 Thin Films By Radiofrequency Sputtering

机译：射频溅射直接制备Cuins_2晶体薄膜

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Crystalline chalcopyrite CuInS_2 thin films were obtained by r.f. sputtering at room temperature using a crystalline CuInS_2 target and without any subsequent toxic gas, chemical or heat treatment. A systematic study of phase formation by X-ray diffraction and Raman spectroscopy and of morphology by scanning electron microscopy and atomic force microscopy was performed as function of relevant sputtering parameters: argon pressure, r.f. power and time of deposition. XRD studies show that films are amorphous until a critical thickness is reached, where they transform into crystalline chalcopyrite films with preferential (112) orientation and average grain size of 25-100 nm. At low deposition rates, smooth films were obtained, whereas at high deposition rates, films are covered with surface particles. Films were p-type conducting with bulk carrier density about 10~(18)/cm~3, determined by Hall effect measurements.
机译：通过r.f.获得晶体黄铜矿CuInS_2薄膜。使用晶体CuInS_2靶材在室温下进行溅射，无需任何后续的有毒气体，化学或热处理。通过X射线衍射和拉曼光谱的相形成以及通过扫描电子显微镜和原子力显微镜的形貌作为相关溅射参数的函数进行了系统的研究：氩气压力，r.f.沉积的功率和时间。 XRD研究表明，在达到临界厚度之前，薄膜是非晶态的，然后转变为具有优先（112）取向和25-100 nm的平均晶粒尺寸的结晶黄铜矿薄膜。在低沉积速率下，可获得光滑的薄膜，而在高沉积速率下，薄膜被表面颗粒覆盖。薄膜为p型导电，通过霍尔效应测量确定其载流子密度约为10〜（18）/ cm〜3。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号