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首页> 外文期刊>Materials Science and Engineering >Dopant Enhanced H Diffusion In Amorphous Silicon And Its Effect On The Kinetics Of Solid Phase Epitaxy
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Dopant Enhanced H Diffusion In Amorphous Silicon And Its Effect On The Kinetics Of Solid Phase Epitaxy

机译：掺杂剂在非晶硅中的H扩散及其对固相外延动力学的影响

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摘要

Dopant enhanced H infiltration into surface amorphous Si (a-Si) layers formed by ion implantation is reported. Dopant enhanced H in-diffusion is observed for both B and P implant profiles in a-Si and the effect of this enhanced in-diffusion on the kinetics of solid phase epitaxial (SPE) crystallization is quantified. Near-surface dopant profiles were formed by multiple energy ion implantation. Anneals were performed in air over the temperature range 500-640 ℃. Secondary ion mass spectrometry (SIMS) analysis of partially annealed samples reveals that implanted dopants enhance the in-diffusion of H thereby increasing its concentration at depths well beyond the dopant implanted region. The effect of an enhanced H concentration on crystallization rates via SPE is monitored using time resolved reflectivity. Boron is found to enhance both H diffusion and SPE to a much greater extent than P. Possible links between the SPE and H diffusion mechanisms are discussed and the possibility of applying SPE models to H diffusion is explored, implications for the formation of shallow junctions are also considered.
机译：据报道，掺杂剂增强了H渗透到通过离子注入形成的表面非晶Si（a-Si）层中。对于非晶硅中的B和P注入轮廓，都观察到了掺杂剂增强的H扩散，并且定量了这种增强的扩散对固相外延（SPE）结晶动力学的影响。通过多次能量离子注入形成近表面掺杂物轮廓。在空气中在500-640℃的温度范围内进行退火。二次离子质谱（SIMS）对部分退火样品的分析表明，注入的掺杂剂增强了H的扩散，从而在远超出掺杂剂注入区域的深度增加了H的浓度。使用时间分辨的反射率可以监测H浓度增加对SPE结晶速率的影响。硼被发现比P能够更大程度地增强H和SPE扩散。讨论了SPE和H扩散机理之间的可能联系，并探讨了将SPE模型应用于H扩散的可能性，这对于浅结的形成具有重要意义。也考虑过。

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