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首页> 外文期刊>Materials Science and Engineering >Bistable resistance switching in surface-oxidized C12A7:e~- single-crystal
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Bistable resistance switching in surface-oxidized C12A7:e~- single-crystal

机译：表面氧化C12A7：e〜-单晶的双稳态电阻转换

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摘要

12CaO·7Al_2O_3 (C12A7) is a typical band insulator, but may be converted to a metallic conductor C12A7:e~-by electron-doping via removal of free oxygen ions sitting in the subnanometer-sized cages as the counter ions. Also, C12A7 is known as a fast oxygen ion conductor. These unique features let us expect that it would be possible to dope electrons to C12A7 by removing the free oxygen ions by an external electric field. In this study, we fabricated C12A7/C12A7:e~- stacking devices and examined their current-voltage characteristics. The thickness of the top C12A7 layer was controlled by low-temperature oxidation with an aid of an optical model analysis of spectroscopic ellipsometry. We found that the C12A7/C12A7:e~-devices exhibited a bistable resistance switching effect with an on-to-off resistance ratio of ～10~2 and operated as a resistive random access memory.
机译：12CaO·7Al_2O_3（C12A7）是典型的带状绝缘体，但可以通过电子掺杂通过除去亚纳米尺寸笼中的自由氧离子作为抗衡离子而转换为金属导体C12A7：e〜。同样，C12A7被称为快速氧离子导体。这些独特的功能使我们期望通过外部电场去除自由氧离子，可以将电子掺杂到C12A7中。在这项研究中，我们制造了C12A7 / C12A7：e〜-堆叠器件，并检查了它们的电流-电压特性。 C12A7顶层的厚度借助光谱椭偏仪的光学模型分析，通过低温氧化来控制。我们发现，C12A7 / C12A7：e〜器件表现出双稳态电阻切换效应，其开/关电阻比约为10〜2，并且可以用作电阻式随机存取存储器。

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  • 来源
    《Materials Science and Engineering》 |2009年第3期|76-79|共4页
  • 作者

    Yutaka Adachi; Sung-Wng Kim; Toshio Kamiya; Hideo Hosono;

  • 作者单位

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midorl-ku, Yokohama 226-8503, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midorl-ku, Yokohama 226-8503, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midorl-ku, Yokohama 226-8503, Japan ERATO-SORST, Japan Science and Technology Agency, in Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midoh-ku, Yokohama 226-8503, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midorl-ku, Yokohama 226-8503, Japan ERATO-SORST, Japan Science and Technology Agency, in Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midoh-ku, Yokohama 226-8503, Japan Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

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  • 正文语种 eng
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  • 关键词

    C12A7; oxygen ion conduction; reduction treatment; electric field doping; resistive random access memory (ReRAM); resistance switching;

    机译：C12A7;氧离子传导;减少治疗;电场掺杂电阻式随机存取存储器（ReRAM）;电阻切换;

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