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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Mid-infrared spectroscopy of the Er-related donor state in Si/Si:Er~(3+) nanolayers
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Mid-infrared spectroscopy of the Er-related donor state in Si/Si:Er~(3+) nanolayers

机译:Si / Si:Er〜(3+)纳米层中Er相关供体态的中红外光谱

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摘要

We present experimental evidence on the donor level related to optical properties of the Er~(3+) ion in crystalline silicon. Using two-color spectroscopy with a free-electron laser we provide a direct link between the identified level in the bandgap and the optical properties of Er~(3+). The investigation is performed in sublimation MBE-grown Si/Si:Er multinanolayer structure, which allows us to take advantage of the preferential formation of a single Er-related center. Quenching of the Er-related 1.5 μm photoluminescence, due to ionization of the donor state with energy E_D ≈ 225 meV, is demonstrated. A microscopic model of the PL quenching mechanism as Auger type energy transfer between excited Er~(3+) ions and free carriers optically ionized from the Er-related donor states is put forward.
机译:我们提供有关晶体硅中Er〜(3+)离子光学性质的供体能级的实验证据。使用带有自由电子激光的双色光谱,我们提供了带隙中确定的能级与Er〜(3+)的光学性质之间的直接联系。该研究是在升华MBE生长的Si / Si:Er多层纳米结构中进行的,这使我们能够利用优先形成单个Er相关中心的优势。证明了由于能量为E_D≈225 meV的施主态的电离,使与Er有关的1.5μm光致发光猝灭。提出了PL猝灭机理的微观模型,即激发的Er〜(3+)离子与从Er相关供体态电离的自由载流子之间的俄歇型能量转移。

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