Ln~(3+):KLu(WO_4)_2/KLu(WO_4)_2 epitaxial layers: Crystal growth and physical characterisation

O. Silvestre; M.C. Pujol; R. Sole; W. Bolanos; J.J. Carvajal; J. Massons; M. Aguilo; F. Diaz

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Ln~(3+):KLu(WO_4)_2/KLu(WO_4)_2 epitaxial layers: Crystal growth and physical characterisation

机译：Ln〜（3 +）：KLu（WO_4）_2 / KLu（WO_4）_2外延层：晶体生长和物理表征

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Monoclinic epitaxial layers of single doped KLu_(1-x)Ln_x(WO_4)_2 (Ln~(3+) = Yb~(3+) and Tm~(3+)) have been grown on optically passive KLuW substrates by liquid phase epitaxy (LPE) technique using K_2W_2O_7 as solvent. The ytterbium content in the layer is in the range of 0.05 ＜ x ＜ 0.75 atomic substitution and the studied thulium concentrations are 0.05 ＜ x ＜ 0.10. The grown epitaxies are free of macroscopic defects and only in highly ytterbium-doped epilayers do some cracks or inclusions appear. The refractive indices of the epilayers were determined. The absorption and emission cross sections of ytterbium and thulium in KLuW are characterised and laser generation results are presented and discussed.

机译：单掺杂KLu_（1-x）Ln_x（WO_4）_2（Ln〜（3+）= Yb〜（3+）和Tm〜（3+））的单斜外延层已通过液相生长在光无源KLuW衬底上以K_2W_2O_7为溶剂的外延（LPE）技术。该层中的content含量在0.05≤x ＜0.75原子取代范围内，所研究的concentrations浓度为0.05 ＜x ＜0.10。生长的外延没有宏观缺陷，只有在高度掺highly的外延层中才会出现一些裂纹或夹杂物。确定了外延层的折射率。表征了KLuW中和th的吸收和发射截面，并给出和讨论了激光产生的结果。

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《Materials Science and Engineering. B, Solid-State Materials for Advanced Technology》 |2008年第3期|p.59-65|共7页
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O. Silvestre; M.C. Pujol; R. Sole; W. Bolanos; J.J. Carvajal; J. Massons; M. Aguilo; F. Diaz;
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2. Spectroscopy of Tb~(3+) ions in monoclinic KLu(WO_4)_2 crystal application of an intermediate configuration interaction theory [J] . Loiko Pavel, Volokitina Anna, Mateos Xavier, Optical Materials . 2018,第Apra期

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Ln~(3+):KLu(WO_4)_2/KLu(WO_4)_2 epitaxial layers: Crystal growth and physical characterisation

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